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Sapphire Substrate – 4 inch (100 mm) M-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What are the trade-offs between the standard 650 µm thickness and the optional 225 µm or 1000 µm thicknesses for M-plane sapphire substrates in device fabrication?
The standard 650 µm thickness offers a balance of mechanical strength and handling convenience for most applications. The optional 225 µm reduces substrate cost and thermal resistance but increases fragility and risk of breakage during processing. The 1000 µm option provides greater rigidity for high-temperature or high-stress epitaxial processes but may introduce higher thermal impedance and warpage under thermal cycling. All thicknesses are available as single-side polished M-plane wafers with the same front-side roughness specification (Ra <0.3 nm).
How does the A-plane 30 mm primary flat configuration affect alignment with standard wafer handling equipment?
The A-plane 30 mm primary flat provides a mechanical orientation reference compatible with most semiconductor wafer handling and alignment tools. For systems that require a notch instead of a flat, a notch configuration is available as an alternative. The flat orientation is specifically aligned to the crystal axes of the M-plane sapphire, consistent with the product's orientation specification.
What are the handling and storage requirements for single-side polished M-plane sapphire substrates with epi-ready front surface roughness Ra <0.3 nm?
The front side is epi-ready with Ra <0.3 nm and must be protected from contamination, scratches, and particulate exposure. Use cleanroom gloves, vacuum tweezers, or edge-grip handling tools, and avoid any contact with the polished surface. The back side is fine ground with Ra <1.2 µm and is less sensitive but still requires careful handling. Store wafers in a clean, dry, particle-free environment, preferably in a sealed wafer carrier or original packaging.
This 4-inch M-plane sapphire substrate offers >99.99% purity monocrystalline Al2O3 with an epi-ready front surface (Ra <0.3 nm) and tight geometric tolerances (TTV <10 µm, BOW <10 µm, WARP <15 µm), making it suitable for high-quality epitaxial deposition. The single-side polished finish and fine-ground back side (Ra <1.2 µm) impose a trade-off for applications requiring mirror-like surfaces on both sides.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% minimizes contamination in epitaxial growth and device fabrication processes.
- Epi-ready front surface: Front-side roughness Ra <0.3 nm meets epitaxial-grade requirements, reducing the need for additional polishing prior to deposition.
Trade-offs
- Single-side polished only: Back-side surface is fine ground (Ra <1.2 µm), not polished; applications requiring both sides smooth will require additional processing or may experience reduced optical transmission.
- Orientation-specific compatibility: M-plane orientation offers distinct growth characteristics but may not be directly interchangeable with C-plane substrates in standard process recipes, demanding careful alignment with intended epitaxial or device requirements.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
