M-Plane Sapphire Substrate 2 in 430μm SSP ATOMFAIR®

$32.90

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

M-plane 2 in (50.8 mm) sapphire substrate, >99.99% monocrystalline Al2O3, 430±25 μm thick, SSP with Ra <0.3 nm front, plus <10 μm TTV, BOW and WARP. Order now.

SKU: AF-WF-S-SAPH-02IN-S015
Category:
Brands:

Sapphire Substrate – 2 inch (50.8 mm) M-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
Product Overview

2 inch (50.8 mm) sapphire substrate in M-Plane orientation is supplied as high-purity monocrystalline Al2O3 (KY) with 430 +/- 25 um standard thickness and single-side polished surface preparation.

The wafer geometry includes A-plane 16 mm primary flat or notch configuration, <10 um TTV, <10 um BOW and <10 um WARP for product comparison.

Performance Features
  • High-purity monocrystalline sapphire material with >99.99% purity.
  • Single-Side Polished surface preparation with roughness values differentiated by front and back side.
  • Diameter-specific thickness, primary flat or notch, TTV, BOW and WARP values are presented for specification review.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-SAP-M2SSP
Material >99.99% high-purity monocrystalline Al2O3 (KY)
Orientation M-Plane
Diameter 2 inch (50.8 mm)
Standard Thickness 430 +/- 25 um
Optional Thickness 200 um, 400 um, 1000 um
Primary Flat / Notch A-plane 16 mm
Polishing Single-Side Polished
Front-Side Roughness Epi-ready, Ra <0.3 nm
Back-Side Roughness Fine ground, Ra <1.2 um
TTV <10 um
BOW <10 um
WARP <10 um
Package 1 piece/set
Selected Specification: Select 2 inch (50.8 mm), M-Plane, Single-Side Polished and preferred thickness option.
Packaging Details: Package 1 piece/set with available cleaning or packing preferences for this sapphire substrate.
Ordering Details: Share the selected model, configuration, quantity and any thickness or packaging preference.
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

What TTV, bow, and warp tolerances are specified for the Atomfair 2-inch M-plane sapphire substrate?

The specified TTV, BOW, and WARP values are each <10 um for the 2 inch (50.8 mm) M-plane sapphire substrate. The standard thickness is 430 ± 25 um. These values are presented as the wafer geometry specification for this single-side polished substrate.

What are the front- and back-side surface roughness specifications for this single-side polished sapphire wafer?

The front side is epi-ready with Ra <0.3 nm, while the back side is fine ground with Ra <1.2 um. This is a single-side polished substrate, so only the front side receives the epi-ready polish. The material is >99.99% high-purity monocrystalline Al2O3 (KY).

What thickness, flat/notch, and packaging options are available for the 2-inch M-plane sapphire substrate?

Standard thickness is 430 ± 25 um, with optional thicknesses of 200 um, 400 um, and 1000 um. The 2 inch (50.8 mm) wafer uses an A-plane 16 mm primary flat or notch. Package is 1 piece/set, and cleaning or packing preferences can be requested during ordering.

The 2-inch M-Plane sapphire substrate from Atomfair is a high-purity monocrystalline Al2O3 wafer with single-side polishing and epi-ready front surface, suitable for epitaxial growth applications. Tight TTV, BOW, and WARP tolerances (<10 μm) ensure geometric uniformity, while the back-side fine-ground finish (Ra <1.2 μm) and limited thickness options present handling and processing constraints.

Positive

  • High-purity monocrystalline Al2O3: Material purity >99.99% with epi-ready front-side roughness Ra <0.3 nm, enabling direct use for high-quality epitaxial layer deposition.
  • Tight geometric tolerances: TTV, BOW, and WARP all specified at <10 μm, ensuring consistent wafer flatness critical for photolithography and thin-film processing uniformity.

Trade-offs

  • Single-side polished only: Back side is fine ground with Ra <1.2 μm, limiting applications requiring double-side polish and potentially causing handling or mounting challenges in certain processes.
  • Thin and brittle substrate: Standard thickness 430 ±25 μm with optional 200 μm, 400 μm, and 1000 μm; thin wafers require careful handling to avoid breakage, and the fine-ground back side may increase particle generation.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).