|
Sapphire Substrate – 2 inch (50.8 mm) R-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
What is the significance of the front-side roughness being Epi-ready (Ra <0.3 nm) while the back-side is fine ground (Ra <1.2 µm) on this single-side polished sapphire substrate?
The front-side Epi-ready roughness (Ra <0.3 nm) is optimized for epitaxial thin-film growth, providing an atomically smooth surface critical for high-quality deposition. The back-side fine ground finish (Ra <1.2 µm) offers sufficient roughness for secure handling and mounting without compromising the polished front surface.
How do the TTV, BOW, and WARP specifications (<10 µm each) affect the usability of this 2-inch R-plane sapphire substrate in photolithography or thin-film processes?
The total thickness variation (TTV), bow, and warp are all specified at <10 µm, ensuring excellent planarity and uniformity across the 50.8 mm diameter wafer. These tight tolerances minimize focus errors during photolithography and prevent stress-induced defects in deposited films, making the substrate suitable for demanding semiconductor and photonics applications.
This 2-inch R-plane sapphire substrate offers high-purity monocrystalline Al2O3 with an epi-ready front surface (Ra <0.3 nm) and tight geometric tolerances (TTV, BOW, WARP <10 μm), but the single-side polished finish with a fine-ground backside (Ra <1.2 μm) requires careful handling for double-sided or optical transmission applications.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% with epi-ready front-side roughness Ra <0.3 nm, suitable for demanding epitaxial growth and thin-film deposition.
- Tight geometric tolerances: TTV, BOW, and WARP all <10 μm, ensuring uniform substrate flatness critical for photolithography and multi-layer processing.
Trade-offs
- Single-side polished only: Backside is fine ground with Ra <1.2 μm, which may cause backside scattering or contamination in double-sided optical or transmission-based applications.
- Standard thickness tolerance: Standard thickness 430 ±25 μm may be too thick for some micro-device designs; optional thicknesses (200, 400, 1000 μm) require explicit ordering specification.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
