Sapphire Substrate 8 inch C-Plane 1000μm DSP ATOMFAIR®

What are the trade-offs between the standard 1000 µm thickness and the optional 700 µm or 1600 µm thicknesses for this 8-inch C-plane double-side polished sapphire substrate?

The standard thickness is 1000 ±25 µm, with optional 700 µm and 1600 µm. Thinner substrates (700 µm) may offer better thermal conductivity for some applications but increase fragility. Thicker substrates (1600 µm) provide greater mechanical rigidity for large-area processing but may affect thermal uniformity. The choice depends on specific device requirements and handling capabilities.

Is this C-plane double-side polished sapphire substrate compatible with epitaxial growth of III-nitride materials, and what surface quality specifications support that?

Yes, this C-plane (0001) sapphire substrate is standard for III-nitride epitaxy (e.g., GaN, AlN). Both front and back surfaces are epi-ready with Ra <0.3 nm, meeting the smoothness requirements for MOCVD or MBE. The high-purity monocrystalline Al2O3 (>99.99%) minimizes contamination.

What handling and storage precautions are required to maintain the epi-ready surface finish of this double-side polished sapphire substrate?

The substrate is double-side polished with Ra <0.3 nm on both sides, making it highly sensitive to particles and scratches. It should be handled with cleanroom gloves or tweezers, stored in a clean, dry container, and protected from contact with hard surfaces. Atomfair offers cleaning and packing preferences to maintain the surface quality.