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Sapphire Substrate – 8 inch (200 mm) C-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What are the front-side and back-side surface roughness specifications for the Atomfair 8-inch C-plane single-side polished sapphire substrate, and what do the 'Epi-ready' and 'Fine ground' designations indicate for intended use?
The front-side roughness is specified as Epi-ready with Ra <0.3 nm, indicating a surface suitable for direct epitaxial thin film deposition with minimal defect density. The back-side roughness is fine ground with Ra <1.2 µm, providing a matte finish that aids in wafer handling and reduces backside reflection during optical processing.
What are the total thickness variation (TTV), bow, and warp specifications for this 8-inch sapphire substrate?
The substrate is specified with TTV <20 µm, BOW <35 µm, and WARP <60 µm. These geometry parameters are critical for maintaining uniform layer thickness during epitaxial growth and ensuring precise alignment in photolithography steps.
What thickness options are available for the 8-inch C-plane sapphire substrate, and what is the standard thickness tolerance?
The standard thickness is 1000 ±25 µm, with optional thicknesses of 700 µm and 1600 µm. The standard tolerance of ±25 µm ensures consistency across substrates for reproducible process integration.
This 8-inch C-plane single-side polished sapphire substrate offers high-purity monocrystalline Al2O3 with epi-ready front-side roughness (Ra <0.3 nm) and tight geometric tolerances (TTV <20 μm, BOW <35 μm, WARP <60 μm), making it suitable for demanding epitaxial and thin-film processes; however, the single-side polish and notch-only configuration impose handling and alignment constraints for certain applications.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% ensures minimal contamination and crystal defects, critical for consistent epitaxial growth and device performance.
- Epi-ready front-side finish: Front-side roughness Ra <0.3 nm eliminates the need for additional polishing, directly supporting high-quality thin-film deposition and photolithography.
Trade-offs
- Single-side polish only: The back side is fine ground (Ra <1.2 μm), which may create thermal or stress non-uniformity in double-side processing or optical applications requiring both sides polished.
- Notch configuration limits alignment: Notch orientation instead of a primary flat reduces compatibility with older wafer-handling systems that rely on flat-based alignment, potentially requiring adapter upgrades.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
