Sapphire Substrate 4 in C-Plane DSP 650μm ATOMFAIR®

$30.90

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

C-plane 4 inch (100 mm) sapphire substrate in >99.99% monocrystalline Al2O3, DSP, 650±25 μm thick, Ra <0.3 nm and TTV <10 μm. 1 pc/set. Order now.

SKU: AF-WF-S-SAPH-04IN-S006
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Sapphire Substrate – 4 inch (100 mm) C-Plane Double-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
Product Overview

4 inch (100 mm) sapphire substrate in C-Plane orientation is supplied as high-purity monocrystalline Al2O3 (KY) with 650 +/- 25 um standard thickness and double-side polished surface preparation.

The wafer geometry includes A-plane 30 mm primary flat or notch configuration, <10 um TTV, <10 um BOW and <15 um WARP for product comparison.

Performance Features
  • High-purity monocrystalline sapphire material with >99.99% purity.
  • Double-Side Polished surface preparation with roughness values differentiated by front and back side.
  • Diameter-specific thickness, primary flat or notch, TTV, BOW and WARP values are presented for specification review.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-SAP-C4DSP
Material >99.99% high-purity monocrystalline Al2O3 (KY)
Orientation C-Plane
Diameter 4 inch (100 mm)
Standard Thickness 650 +/- 25 um
Optional Thickness 225 um, 430 um, 1000 um
Primary Flat / Notch A-plane 30 mm
Polishing Double-Side Polished
Front-Side Roughness Epi-ready, Ra <0.3 nm
Back-Side Roughness Epi-ready, Ra <0.3 nm
TTV <10 um
BOW <10 um
WARP <15 um
Package 1 piece/set
Selected Specification: Select 4 inch (100 mm), C-Plane, Double-Side Polished and preferred thickness option.
Packaging Details: Package 1 piece/set with available cleaning or packing preferences for this sapphire substrate.
Ordering Details: Share the selected model, configuration, quantity and any thickness or packaging preference.
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

What are the critical geometric tolerances (TTV, BOW, WARP) for this 4-inch C-plane double-side polished sapphire substrate and how do they impact epitaxial growth uniformity?

This substrate specifies TTV <10 μm, BOW <10 μm, and WARP <15 μm. These tight tolerances ensure minimal wafer bowing and thickness variation, which is critical for uniform film deposition in processes such as MOCVD. The source explicitly states these values under Technical Specifications.

For which specific epitaxial applications is the C-plane orientation and double-side polished surface of this sapphire substrate optimized?

The C-plane (0001) orientation is standard for GaN-based epitaxy, including LEDs and power electronics. The double-side polished surface provides epi-ready roughness Ra <0.3 nm on both sides, enabling high-quality film growth. The A-plane 30 mm primary flat or notch facilitates alignment in deposition systems, as described in the product specifications.

What packaging and cleaning options are available for this 4-inch sapphire substrate to ensure it arrives in epi-ready condition?

The substrate is supplied as 1 piece/set with optional cleaning or packing preferences, which can be requested when ordering. For specific handling recommendations to maintain the epi-ready surface (Ra <0.3 nm), contact the technical sales team at inquiry@atomfair.com. The product page details these packaging options.

This 4-inch C-plane sapphire substrate (AF-SAP-C4DSP) provides >99.99% pure monocrystalline Al2O3 with double-side epi-ready polish (Ra<0.3 nm) and tight TTV (<10 um), BOW (<10 um), and WARP (<15 um) tolerances, making it suitable for high-quality epitaxial growth. The single-piece packaging is a logistical consideration, while optional thicknesses (225, 430, 1000 um) offer flexibility for specific device designs.

Positive

  • High-purity monocrystalline Al2O3: The substrate is fabricated from >99.99% pure monocrystalline Al2O3 (KY), minimizing impurity-related defects in epitaxial thin-film growth.
  • Double-side epi-ready polish (Ra<0.3 nm): Both front and back surfaces are polished to epi-ready roughness (Ra<0.3 nm), eliminating the need for additional surface preparation and enabling direct use in deposition processes.

Trade-offs

  • Single-piece packaging: The product is packaged as 1 piece/set, which may require multiple orders for processes needing multiple substrates simultaneously, increasing handling and logistics overhead.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).