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Sapphire Substrate – 3 inch (76.2 mm) C-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the front-side and back-side surface roughness specification for the 3-inch C-plane single-side polished sapphire substrate, and how does it impact epitaxial layer quality?
The front-side roughness is Epi-ready with Ra <0.3 nm, suitable for high-quality epitaxial growth. The back-side is fine ground with Ra <1.2 um, providing adequate handling stability. This dual-surface finish ensures optimal performance for device fabrication while maintaining mechanical integrity.
What thickness options are available for the 3-inch sapphire substrate, and which applications require non-standard thicknesses?
Standard thickness is 500 +/- 25 um. Optional thicknesses include 430 um, 520 um, and 800 um. Thinner substrates (430 um) may be used for thermal management or reduced weight, while thicker substrates (800 um) offer greater mechanical rigidity for high-temperature processing.
What are the TTV, BOW, and WARP values for this sapphire substrate, and why are they critical for photolithography and wafer bonding?
The specified TTV is <10 um, BOW <10 um, and WARP <15 um. These tight tolerances ensure uniform thickness across the wafer, minimize distortion during processing, and enable reliable alignment and bonding steps common in semiconductor and photonics applications.
This 3-inch C-plane sapphire substrate provides an epi-ready front surface (Ra <0.3 nm) and high-purity monocrystalline Al2O3 (>99.99%), enabling consistent epitaxial growth in thin-film deposition processes. The single-side polished finish and thickness tolerance of ±25 µm impose constraints for applications requiring double-sided optical quality or sub-micrometer thickness precision.
Positive
- Epi-ready front surface roughness: Front-side roughness Ra <0.3 nm meets epi-ready standards, enabling direct use for high-quality thin-film epitaxy without additional polishing steps.
- High-purity monocrystalline Al2O3: Material purity >99.99% minimizes contaminant-induced defects, ensuring consistent substrate performance in sensitive semiconductor and photonic device fabrication.
Trade-offs
- Single-side polished only: Back-side roughness Ra <1.2 µm (fine ground) precludes double-sided optical applications or processes requiring polished back-side surfaces for thermal or mechanical contact.
- Thickness tolerance ±25 µm: Standard thickness of 500 ±25 µm may require selecting optional thicknesses (430, 520, 800 µm) for applications demanding tighter dimensional control, such as waveguide fabrication or precise resonator cavities.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
