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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 8 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This off-cut sapphire substrate is fabricated to tight geometric tolerances and surface finish specifications for epitaxial applications. The C/A off-cut orientation of 8 degrees provides controlled step-flow growth for heteroepitaxial layers.
- Thickness and Flatness Tolerances: Thickness is specified as 430 ± 25 µm, with TTV <10 µm, BOW <15 µm, and WARP <15 µm to ensure substrate uniformity for epitaxial deposition.
- Surface Finish Specifications: The front side is epi-ready with Ra <0.3 nm, and the back side is fine ground with Ra <1.2 µm, providing a suitable surface for thin-film growth and handling.
- Crystallographic Orientation: Substrate is cut with a C/A off-cut of 8 degrees to control step-flow growth and reduce defect density in heteroepitaxial layers.
- Material Purity: The substrate is fabricated from >99.99% high-purity monocrystalline Al2O3 (KY) to minimize contamination during high-temperature processing.
Why is an 8-degree off-cut used for C/A sapphire substrates in epitaxial growth?
The 8-degree off-cut on a C/A orientation sapphire substrate is a standard specification to suppress antiphase domain formation during III-nitride epitaxy, enabling higher-quality thin-film growth. The product specifically offers C/A off-cut with 8 degree selection as a clear specification parameter.
What are the front-side and back-side roughness specifications for this single-side polished off-cut sapphire substrate?
The front-side is specified as epi-ready with Ra <0.3 nm, suitable for direct epitaxial deposition. The back-side is fine ground with Ra <1.2 um, which is not intended for growth but provides adequate surface for handling and thermal management during processing.
What mechanical tolerances (TTV, BOW, WARP) are specified for this 2-inch off-cut sapphire substrate?
The substrate has a total thickness variation (TTV) of <10 um, bow (BOW) <15 um, and warp (WARP) <15 um. These tight tolerances ensure uniform layer thickness during film deposition and minimize stress-induced defects during wafer bonding or lithography steps.
This 2-inch off-cut sapphire substrate (C/A, 8°) offers >99.99% pure monocrystalline Al2O3 with an epi-ready front-side roughness (Ra <0.3 nm) for direct thin-film deposition, but the single-side polish and fine-ground back-side (Ra <1.2 μm) restrict double-side optical applications, and the fixed off-cut angle limits use to specific epitaxial orientations.
Positive
- Ultra-high-purity monocrystalline Al2O3: Material exceeds 99.99% purity (KY-grade), minimizing contamination risk in epitaxial growth and high-temperature processing.
- Epi-ready front-side surface finish: Front-side roughness Ra <0.3 nm enables immediate use for thin-film deposition without additional polishing steps.
Trade-offs
- Single-side polish only: Back-side is fine-ground to Ra <1.2 μm, not suitable for applications requiring double-side optical quality or symmetric polishing.
- Fixed off-cut orientation and angle: C/A off-cut at 8 degrees is not adjustable; incompatible with processes requiring R-plane, M-plane, or other off-cut angles.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
