Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2

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Silicon has long been a key semiconductor for most electronic applications, yet it is less efficient than silicon carbide (SiC) wafers. Now adopted in diverse uses-especially electric vehicles-SiC wafers address energy and cost challenges in developing high-efficiency, high-power devices. Composed of pure silicon and carbon, they outperform silicon in three key aspects: higher critical avalanche breakdown field, greater thermal conductivity, and wider bandgap (3eV). They withstand 8x higher voltage gradients than silicon, have lower high-temperature leakage current, higher current density, thinner structures (1/10 the thickness of silicon epitaxial layers), and lower conduction loss (4x higher doping concentration than silicon).

SKU: AFMSHLTS441
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Description

Specifications
Substrate Material Silicon Carbide (SiC)
Diameter 6 inch
Lattice Mismatch 3.50%
Thermal Expansion Difference 25%
Defect Density 5×108/cm2
Leakage Current High
Integration Potential Medium

Larger diameter wafers for high-power RF applications with superior thermal management capabilities.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

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