Description
High-Quality InP Substrates
High-quality InP substrates with various doping options (none, Sn, S, Fe, Zn). Ideal for high-speed electronics and photonic applications. Features low dislocation density and excellent electrical properties.
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Property
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Value
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Doping
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none, Sn, S, Fe, Zn
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Conduction Types
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N, N, N, SI, P
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Carrier Concentration
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1-2×10¹⁸ cm⁻³, 1-3×10¹⁸ cm⁻³, 1-4×10¹⁸ cm⁻³, 6-4×10¹⁵ cm⁻³
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Dislocation Density
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<5×10³ cm⁻²
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Growth Method
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LEC
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Standard Substrate Size
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φ2″×0.35mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
