Description
A high-quality 4H-SiC single crystal substrate with P-type doping, ideal for high-power and high-temperature applications. It features excellent thermal conductivity and breakdown electrical field properties. Suitable for III-V nitride deposition and optoelectronic devices.
| Property | Value |
|---|---|
| Lattice Parameters | a=3.082A, c=10.092A |
| Stacking Sequence | ABCB |
| Mohs Hardness | ≈9.2 |
| Density | 3.23g/cm³ |
| Thermal Expansion Coefficient | 4.3×10⁻⁶/K(⊥Caxis), 4.7×10⁻⁶/K(Caxis) |
| Refraction Index @750nm | no=2.621, ne=2.671 |
| Dielectric Constant | c~9.66 |
| Thermal Conductivity | 3-5W/cm·K@298K |
| Band-Gap | 3.26eV |
| Break-Down Electrical Field | 2-5×10⁶V/cm |
| Saturation Drift Velocity | 2.0×10⁵m/s |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
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