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Atomfair 4-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 4 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

As a third-generation semiconductor material, gallium nitride (GaN) features superior bandgap (far higher than silicon and silicon carbide), thermal conductivity, electron mobility, and on-resistance. Due to high N dissociation pressure during GaN growth at high temperatures, large-sized GaN single crystals are hard to obtain-thus, preparing epitaxial GaN films on heterogeneous substrates becomes the main method for GaN material and device research. Common growth methods include HVPE, MBE, and MOCVD. Most commercial devices are based on GaN heteroepitaxy, with SiC, Si, and Sapphire as primary substrates.

SKU: AFMSOJDO635
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Description

Specifications
Substrate Material Silicon Carbide (SiC)
Diameter 4 inch
Lattice Mismatch 3.50%
Thermal Expansion Difference 25%
Defect Density 5×108/cm2
Leakage Current High
Integration Potential Medium

High thermal conductivity enables operation at high voltages and drain currents. Primary applications in RF power amplifiers for 5G infrastructure.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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