Description
A 3C-SiC single crystal substrate with N-type doping, optimized for high-speed and high-frequency applications. It features a lower band-gap and high saturation drift velocity. Suitable for advanced electronic and optoelectronic devices.
| Property | Value |
|---|---|
| Lattice Parameters | a=4.349A |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈9.2 |
| Density | 3.17g/cm³ |
| Thermal Expansion Coefficient | 3.8×10⁻⁶/K |
| Refraction Index @750nm | n=2.615 |
| Dielectric Constant | c~9.66 |
| Thermal Conductivity | 3-5W/cm·K@298K |
| Band-Gap | 2.36eV |
| Break-Down Electrical Field | 2-5×10⁶V/cm |
| Saturation Drift Velocity | 2.7×10⁷m/s |
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