FREE SHIPPING with $59 or More. New Customer? Inquire for Major Discount & Free Samples! Online Payments & POs Accepted.

Awaiting product image

Atomfair 3″ Si/Te-doped GaAs Single Crystal Wafer

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

A compound of gallium and arsenic, our GaAs wafer is a III-V direct-bandgap semiconductor with a zinc blende crystal structure. It’s ideal for manufacturing microwave ICs, MMICs, IR LEDs, laser diodes, solar cells, and optical windows. As a high-quality substrate, it enables epitaxial growth of other III-V semiconductors like InGaAs and AlGaAs, meeting rigorous standards for optoelectronic and high-frequency applications.

SKU: AFMSFKCE826
Category:
Brands:

Description

Property Value
Crystal Material Single Crystal Gallium Arsenide, VGF/LEC grown
Orientation (100) or (111) a°±β°
Doping Si/Te
Diameter 76.2mm±0.25mm
Thickness 350±25um / 550±25um / 625±25um
Etch Pit Density ≤5.10 cm⁻²
Primary Flat (0-1-1)±0.5deg, 22±1.0mm
Secondary Flat (0-1 1)±5.0 deg, 11±1.0mm
Front Surface Polished in Epi-ready Prime grade
Back Surface Polished / Lapping or Etched
Epi-ready Yes

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Related products