Description
| Property | Value |
|---|---|
| Crystal Material | Single Crystal Gallium Arsenide, VGF/LEC grown |
| Orientation | (100) or (111) a°±β° |
| Doping | Zn |
| Diameter | 50mm±0.25mm |
| Thickness | 350±25um / 550±25um / 625±25um |
| Resistivity | (1-10)x10Ω.cm |
| Mobility | 3000~5000 cm²/V-sec |
| Doping Concentration | (0.1-3.0)x10¹⁸/cm³ |
| Etch Pit Density | ≤710 cm⁻² |
| Primary Flat | (0-1-1)±0.5deg, 16±1.0mm |
| Secondary Flat | (0-1 1)±5.0 deg, 8±1.0mm |
| Front Surface | Polished in Epi-ready Prime grade |
| Back Surface | Polished / Lapping or Etched |
| Epi-ready | Yes |
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
