Atomfair 2-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 2 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2

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As a third-generation semiconductor material, gallium nitride (GaN) features superior bandgap (far higher than silicon and silicon carbide), thermal conductivity, electron mobility, and on-resistance. Due to high N dissociation pressure during GaN growth at high temperatures, large-sized GaN single crystals are hard to obtain-thus, preparing epitaxial GaN films on heterogeneous substrates becomes the main method for GaN material and device research. Common growth methods include HVPE, MBE, and MOCVD. Most commercial devices are based on GaN heteroepitaxy, with SiC, Si, and Sapphire as primary substrates.

SKU: AFMSDIKQ934
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Description

Specifications
Substrate Material Silicon Carbide (SiC)
Diameter 2 inch
Lattice Mismatch 3.50%
Thermal Expansion Difference 25%
Defect Density 5×108/cm2
Leakage Current High
Integration Potential Medium

Combines SiC’s excellent thermal conductivity with GaN’s high-frequency and low-loss characteristics. Ideal for RF applications including 5G base stations and defense sector power amplifiers.

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To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

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