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Atomfair 2″ Ge-doped InSb Single Crystal Wafer Ge-doped InSb50.8±0.3mm500±25μm P-type 1-4×1016 cm-3<2x102 cm-2 0.17 eV 78,000 cm2/V·s

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Indium Antimonide (InSb) is a crystalline compound of indium (In) and antimony (Sb), boasting stable physicochemical properties and excellent process compatibility. As a III-V narrow-bandgap semiconductor, it’s ideal for infrared detectors-used in thermal imagers, FLIR systems, infrared-guided missile systems, and infrared astronomy-with sensitivity to 1-5μm wavelengths. It was widely applied in legacy single-detector mechanical scanning thermal imaging systems and also serves as a terahertz radiation source (a strong photo-Dember emitter). Available in 2  3  4 sizes.

SKU: AFMSLAPU611
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Description

Property Value
Material Ge-doped InSb
Diameter 50.8±0.3mm
Thickness 500±25μm
Conductivity Type P-type
Carrier Concentration 1-4×1016 cm-3
Dislocation Density <2×102 cm-2
Bandgap (300K) 0.17 eV
Electron Mobility (RT) 78,000 cm2/V·s

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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