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Sapphire Substrate – 2 inch (50.8 mm) A-Plane Double-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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How does the double-side polished surface with Ra <0.3 nm on both sides impact the quality of epitaxial films grown on this A-Plane sapphire substrate?
The double-side polished surface with front-side and back-side roughness both specified as Ra <0.3 nm ensures an epi-ready surface that minimizes defect nucleation and promotes uniform film growth. This low roughness is critical for high-quality heteroepitaxial deposition, as it reduces light scattering and improves interface quality.
What is the role of the A-Plane 16 mm primary flat in ensuring proper orientation during wafer processing?
The A-Plane 16 mm primary flat provides a crystallographic reference for alignment in processing tools, ensuring consistent orientation of the A-Plane substrate during photolithography, deposition, and cutting. This flat is standard for 2-inch sapphire wafers and facilitates compatibility with automated handling systems.
Why are the TTV, BOW, and WARP specifications of <10 µm critical for device fabrication on 2-inch sapphire substrates?
The TTV (<10 µm), BOW (<10 µm), and WARP (<10 µm) specifications ensure that the substrate maintains consistent flatness and thickness uniformity across the entire 50.8 mm diameter. This uniformity is essential for maintaining focus accuracy in photolithography and preventing stress-induced defects in subsequent thin film layers.
Atomfair's 2-inch A-Plane sapphire substrate offers high-purity monocrystalline Al2O3 with double-side epi-ready polishing (Ra < 0.3 nm) and tight geometric tolerances (TTV, BOW, WARP < 10 μm), making it suitable for epitaxial growth and optical applications requiring a specific crystal orientation.
Positive
- Double-side epi-ready polishing: Both front and back surfaces achieve Ra < 0.3 nm, eliminating the need for additional polishing in epitaxial or optical applications.
- High-purity monocrystalline Al2O3: >99.99% purity with TTV, BOW, and WARP each <10 μm ensures uniformity and reproducibility for high-precision thin-film growth.
Trade-offs
- 2-inch diameter wafer size: Standard diameter of 50.8 mm may require specialized tooling and is not compatible with larger (4-inch or 6-inch) processing systems without modification.
- A-Plane orientation constraints: A-Plane crystal orientation has anisotropic properties that must be matched to the intended epitaxial layer or device design; not interchangeable with C-plane or R-plane substrates.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
