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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 1 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Why is the C/A off-cut orientation and 1 degree angle critical for sapphire substrate performance in epitaxial growth?
The C/A off-cut orientation with a 1 degree angle promotes controlled step-flow growth during epitaxy, reducing defect density and improving film uniformity. This substrate is >99.99% high-purity monocrystalline Al2O3 (KY) with the off-cut orientation and angle presented as clear selectable specifications, allowing precise matching to specific deposition requirements.
What are the front-side and back-side roughness specifications on this single-side polished sapphire substrate, and how do they affect integration?
The front-side is epi-ready with Ra <0.3 nm, suitable for high-quality thin-film deposition, while the back-side is fine ground with Ra <1.2 μm, optimized for handling and thermal contact. This dual-surface finish ensures both application performance and mechanical stability during processing.
What are the TTV, BOW, and WARP tolerances for this 2-inch off-cut sapphire substrate, and why are they important for device fabrication?
The substrate has TTV <10 μm, BOW <15 μm, and WARP <15 μm, ensuring uniform thickness and minimal warpage for consistent photolithography and bonding steps. These tight tolerances are critical for maintaining layer uniformity and preventing stress-induced defects in subsequent device processing.
This 2-inch off-cut sapphire substrate features C/A off-cut orientation at 1 degree, single-side polished with epi-ready front-side roughness (Ra<0.3 nm) and fine-ground back-side. The 430±25 µm thickness and <10 µm TTV make it suitable for epitaxial growth in semiconductor and photonics research.
Positive
- High-purity monocrystalline Al2O3: >99.99% purity KY-grown sapphire ensures minimal contamination for sensitive epitaxial processes.
- Epi-ready front-side surface: Ra<0.3 nm front-side roughness enables direct use for thin film deposition without additional polishing.
Trade-offs
- Single-side polished limitation: Only front-side is polished; back-side fine ground (Ra<1.2 µm) may cause scattering or require additional processing for transmission applications.
- Thickness tolerance bandwidth: 430±25 µm thickness range may require sorting for applications demanding precise optical path length or mechanical alignment.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
