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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 0.5 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What are the critical surface roughness specifications for the front and back sides of this off-cut sapphire substrate?
The front side of this 2-inch off-cut sapphire substrate is epi-ready with a roughness of Ra <0.3 nm, ensuring a smooth surface for epitaxial thin-film deposition. The back side is fine ground with a roughness of Ra <1.2 μm, providing mechanical stability without requiring full polishing, as stated in the specification table.
What are the dimensional tolerances (TTV, BOW, WARP) for this 2-inch off-cut sapphire substrate?
The substrate has a total thickness variation (TTV) of less than 10 μm, a bow of less than 15 μm, and a warp of less than 15 μm, as listed in the technical specifications. These tight tolerances ensure high planarity critical for uniform thin-film growth and device fabrication.
What is the material purity and crystal orientation of this off-cut sapphire substrate?
The substrate is fabricated from >99.99% high-purity monocrystalline Al2O3 (KY) with a C/A off-cut orientation at 0.5 degrees, as specified in the product overview and technical table. This high purity and defined off-cut angle provide a consistent crystalline template for epitaxial processes.
This 2-inch off-cut sapphire substrate provides high-purity monocrystalline Al2O3 (>99.99%) with a precise C/A off-cut of 0.5 degrees and an epi-ready front-side roughness of Ra <0.3 nm, enabling direct epitaxial deposition for nitride semiconductor applications. However, the single-side polished finish and thickness tolerance of ±25 μm impose constraints on double-sided processing and precise alignment in multilayer stacks.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% with controlled C/A off-cut orientation at 0.5 degrees, ensuring consistent crystallographic properties for epitaxial growth.
- Epi-ready front-side surface: Front-side roughness Ra <0.3 nm enables direct epitaxial deposition without additional polishing, reducing preparation steps for thin-film growth.
Trade-offs
- Single-side polished only: Back-side is fine ground with Ra <1.2 μm, which may require additional polishing for applications needing double-sided optical or epitaxial quality.
- Thickness tolerance ±25 μm: The 430 μm nominal thickness with ±25 μm tolerance can be a limiting factor for precision alignment in multilayer heterostructures or device integration.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
