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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/M off-cut 1 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the significance of the C/M off-cut orientation and 1 degree off-cut angle for epitaxial film quality?
The C/M off-cut orientation and 1 degree off-cut angle reduce step bunching and improve film uniformity during III-V and nitride epitaxy. The substrate is >99.99% high-purity monocrystalline Al2O3 (KY) with an epi-ready front-side roughness of Ra <0.3 nm, providing an optimal nucleation surface for high-quality thin-film growth.
Can this 2-inch off-cut sapphire substrate be used for MBE or MOCVD growth of GaN?
Yes, it is suitable for MBE and MOCVD growth of GaN. The C/M off-cut 1 degree orientation is a standard choice for GaN heteroepitaxy to reduce threading dislocation density. The substrate's tight TTV (<10 um), BOW (<15 um), and WARP (<15 um) specifications ensure uniform deposition across the 2-inch diameter.
What are the critical handling and cleaning requirements for this single-side polished sapphire substrate?
The front side is epi-ready with Ra <0.3 nm and must be protected from particles and contaminants; the back side is fine ground (Ra <1.2 um) and less sensitive. Use cleanroom protocols, store in a clean dry environment, and avoid any contact with the polished surface. The substrate is supplied as 1 piece per set and should be handled only by the edges.
This 2-inch off-cut sapphire substrate (C/M, 1 degree) offers high-purity monocrystalline Al2O3 (KY) with an epi-ready front-side roughness of Ra <0.3 nm and a fine-ground back-side, providing a balanced surface for thin-film deposition while maintaining mechanical stability.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% (KY) ensures minimal contamination for epitaxial growth and device fabrication.
- Epi-ready front-side surface: Front-side roughness Ra <0.3 nm provides an atomically smooth surface for high-quality thin-film deposition, while the fine-ground back-side (Ra <1.2 um) offers handling durability.
Trade-offs
- Fixed off-cut angle limitation: This substrate is specified with a 1-degree off-cut angle; applications requiring different off-cut angles (e.g., 0.5 or 2 degrees) will require a different SKU, limiting on-the-fly adjustment.
- Single-side polished only: Only the front side is polished to epi-ready quality; the back side is fine-ground, which may be a constraint for applications requiring double-side polishing for optical symmetry or stress balancing.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
