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Sapphire Substrate – 6 inch (150 mm) R-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the significance of the A-plane 47.5 mm primary flat or notch configuration on the R-Plane sapphire substrate?
The A-plane 47.5 mm primary flat or notch is used for wafer alignment and handling in fabrication tools. The source specifies that this geometry is included for product comparison and ensures compatibility with standard 6-inch wafer cassettes and processing equipment.
How does the front-side and back-side roughness specification affect the performance of this single-side polished sapphire substrate?
The front-side roughness is epi-ready with Ra <0.3 nm, critical for high-quality epitaxial film growth or device fabrication. The back-side roughness is fine ground with Ra <1.2 um, which provides sufficient texture for handling and reduces thermal slip during processing. These specifications are defined in the product description.
What are the trade-offs when selecting an optional thickness of 500 um or 1300 um versus the standard 1000 um thickness for this sapphire substrate?
The standard thickness is 1000 +/- 25 um, offering a balance of mechanical rigidity and thermal conductance. Choosing 500 um reduces substrate weight and cost but may increase fragility and warpage risk. Choosing 1300 um increases mechanical stability and thermal mass but may affect thermal budget management and compatibility with certain deposition systems. The source provides these as optional thicknesses.
This 6-inch R-plane sapphire substrate provides high-purity (>99.99%) monocrystalline Al2O3 with single-side polished epi-ready front surface (Ra<0.3 nm) and tight geometric tolerances (TTV<10 um, BOW<15 um, WARP<20 um), suitable for research-grade epitaxial and thin film applications.
Positive
- High-purity monocrystalline Al2O3 with epi-ready surface: Front-side roughness Ra<0.3 nm enables direct epitaxial deposition without additional polishing, while >99.99% purity minimizes contamination in sensitive growth processes.
- Tight geometric tolerances: TTV<10 um, BOW<15 um, and WARP<20 um ensure uniform wafer handling, photolithography alignment, and consistent process results across the substrate.
Trade-offs
- Single-side polish limits back-side applications: Back-side is fine ground with Ra<1.2 um, not polished, which may reduce optical transmission or require additional processing for double-side or back-side contact applications.
- R-plane orientation requires careful handling: R-plane sapphire exhibits anisotropic thermal expansion and cleavage behavior, necessitating precise temperature control and handling protocols to avoid wafer fracture during processing.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
