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Atomfair 3″ Te-doped GaSb Single Crystal Wafer Te-doped GaSb 76.2±0.3mm 600±25μm N-type (1-20)x1017 cm-3 2000-3500 cm²/V·s <2x10³ cm-2 (100) SSP/DSP

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

GaSb (Gallium Antimonide) is a III-V group semiconductor compound composed of gallium and antimony, with a lattice constant of approximately 0.61nm. Boasting excellent electrical, optical, and thermal properties, it’s ideal for infrared detectors, infrared LEDs, lasers, transistors, and thermophotovoltaic systems, showing great potential in high quantum efficiency and high-frequency devices. It also enables superlattices with customized optical/transmission properties and serves as a booster cell in tandem solar arrangements to enhance the efficiency of photovoltaic and high-performance TPV cells. We offer 2”, 3”, and 11” GaSb single crystal wafers.

SKU: AFMSLYNZ774
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Description

Property Value
Material Te-doped GaSb
Diameter 76.2±0.3mm
Thickness 600±25μm
Conductivity Type N-type
Carrier Concentration (1-20)×1017 cm-3
Mobility 2000-3500 cm2/V·s
Dislocation Density <2×103 cm-2
Orientation (100)
Surface Single/Double side polished

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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