Atomfair 2″ Undoped InSb Single Crystal Wafer Undoped InSb 50.8±0.3mm 500±25μm N-type <3x1015 cm-3 <2x102cm-2 0.17eV 78,000 cm2/-s

Indium Antimonide (InSb) is a crystalline compound of indium (In) and antimony (Sb), boasting stable physicochemical properties and excellent process compatibility. As a III-V narrow-bandgap semiconductor, it’s ideal for infrared detectors—used in thermal imagers, FLIR systems, infrared-guided missile systems, and infrared astronomy—with sensitivity to 1-5μm wavelengths. It was widely applied in legacy single-detector mechanical scanning thermal imaging systems and also serves as a terahertz radiation source (a strong photo-Dember emitter). Available in 2”, 3”, 4” sizes.

Description

Property Value
Material Undoped InSb
Diameter 50.8±0.3mm
Thickness 500±25μm
Conductivity Type N-type
Carrier Concentration <3×1015 cm-3
Dislocation Density <2×102 cm-2
Bandgap (300K) 0.17 eV
Electron Mobility (RT) 78,000 cm2/V·s