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Atomfair High-Purity 4H/6H-SiC Single Crystal Wafer Substrate (N-Type Conductive, Polished Si/C Face)

Premium-quality 4H-SiC and 6H-SiC single crystal wafer substrates with N-type conductivity, available in both Si-face and C-face polished options. These wafers feature precise orientation accuracy (±0.5°) and are ideal for advanced semiconductor applications. Offered in standard dimensions with small off-axis cuts for specialized research and production needs.

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Description

Premium-quality 4H-SiC and 6H-SiC single crystal wafer substrates with N-type conductivity, available in both Si-face and C-face polished options. These wafers feature precise orientation accuracy (±0.5°) and are ideal for advanced semiconductor applications. Offered in standard dimensions with small off-axis cuts for specialized research and production needs.

Polytype Orientation Dimensions (mm) Off-Axis Cut Surface Finish Orientation Accuracy Packaging Qty per Pack
4H-SiC (0001) Si-face 13×3×0.33 Small off-cut (O-cut) Polished Si-face ±0.5° Per piece 10
4H-SiC (000-1) C-face 13×3×0.33 Small off-cut (O-cut) Polished C-face ±0.5° Per piece 10
6H-SiC (000-1) C-face 13×3×0.33 Small off-cut (O-cut) Polished C-face ±0.5° Per piece 10
4H-SiC <0001> 4° off 13×3×0.35 4° off-axis Single side polished – Per piece 10

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.

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