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Sapphire Substrate – 3 inch (76.2 mm) C-Plane Double-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What are the implications of the TTV, BOW, and WARP specifications on epitaxial layer uniformity for GaN or similar thin-film deposition on this C-plane sapphire substrate?
The substrate's TTV (<10 um), BOW (<10 um), and WARP (<15 um) specifications ensure minimal wafer distortion during high-temperature epitaxial growth, which is critical for maintaining uniform film thickness and reducing defect density in GaN and other III-nitride depositions. These tolerances are standard for research-grade C-plane sapphire and are enabled by the high-purity monocrystalline Al2O3 (KY) material with >99.99% purity.
How does the double-side polished surface with Ra <0.3 nm on both sides affect the substrate's suitability for both front-side epitaxy and back-side thermal management?
The double-side polished surface provides an epi-ready front side (Ra <0.3 nm) for direct thin-film deposition without additional polishing, and a back side with identical roughness (Ra <0.3 nm) for optimal thermal contact with the susceptor, reducing thermal gradients during growth. This eliminates the need for back-side lapping and enhances process consistency for sensitive epitaxial processes.
For which specific applications would the optional thickness options of 430 um, 520 um, or 800 um be preferred over the standard 500 um thickness for this C-plane sapphire substrate?
The standard 500 um thickness is suitable for most research and production applications. The 430 um option is preferred for reduced thermal resistance or weight constraints, the 520 um option provides slightly increased mechanical strength while maintaining compatibility with standard wafer handling tools, and the 800 um option is recommended for high-power devices requiring better heat dissipation and reduced wafer bowing under high-temperature processing. All options maintain the same double-side polished surface quality and C-plane orientation.
This 3-inch C-plane sapphire substrate provides high-purity monocrystalline Al2O3 (>99.99%) with double-side polished epi-ready surfaces (Ra <0.3 nm) and tight flatness tolerances (TTV <10 µm, BOW <10 µm, WARP <15 µm), making it suitable for III-Nitride epitaxial growth and thin-film deposition, though limited thickness options and the need for cleanroom handling are practical constraints.
Positive
- High-purity epi-ready surface: Monocrystalline Al2O3 with >99.99% purity and double-side polished roughness Ra <0.3 nm provides an ideal template for high-quality epitaxial film growth.
- Tight geometric tolerances: TTV <10 µm, BOW <10 µm, and WARP <15 µm ensure consistent substrate flatness critical for photolithography and uniform thin-film deposition.
Trade-offs
- Delicate double-side polished surface: Both sides are epi-ready (Ra <0.3 nm), requiring strict cleanroom handling and storage to avoid particle contamination or scratches.
- Limited thickness options: Standard thickness is 500 ±25 µm with optional 430, 520, and 800 µm; other thicknesses are not available, which may constrain device design or thermal management.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
