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Gallium Nitride (GaN) Evaporation Material, Powder, 99.4%, 35 µm
Product Type: Compound Evaporation Material
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For material selection, deposition-source matching, pack-size confirmation or quotation support, contact our technical sales team.
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This gallium nitride powder requires e-beam evaporation using a compatible liner, such as Al2O3, to prevent contamination. Deposition source geometry must be matched to the material's melting point (800°C) and density (6.1 g/cm³) for optimal film quality.
- Evaporation Method: Use e-beam evaporation with a compatible liner; thermal evaporation requires a high-temperature crucible via RFQ.
- Liner Material: Al2O3 is specified as a compatible liner for the e-beam hearth.
- Hardware Matching: Match the evaporation source hardware and process route to the material's melting point (800°C) and film requirements.
What is the significance of the 99.4% purity and 35 µm particle size for GaN evaporation in e-beam deposition?
The 99.4% purity ensures minimal contamination in thin films, critical for GaN's optoelectronic properties. The 35 µm powder size facilitates uniform evaporation and consistent deposition rates in e-beam hearths. The listed melting point of 800°C and density of 6.1 g/cm³ support process parameter tuning.
Which evaporation source hardware is compatible with this GaN powder?
The material is designed for e-beam evaporation using a hearth with compatible liner; high-temperature crucible is available by RFQ. The product sheet indicates Al2O3 as a liner material. Thermal feasibility requires RFQ, as GaN's decomposition behavior may not suit standard thermal evaporation.
What procurement and handling checks are required before ordering this GaN evaporation material?
Buyers must confirm deposition source geometry, required quantity, certificate requirements, and shipment conditions. The product is supplied as a powder; proper handling to avoid moisture absorption and contamination is advised. Safety data sheet and export requirements should be reviewed per laboratory use as stated in the product documentation.
This Gallium Nitride powder (99.4%, 35 µm) is evaluated for e-beam evaporation deposition of GaN thin films. The specified particle size and purity support reproducible film growth, but buyers must confirm hardware compatibility and procurement requirements before use.
Positive
- Defined particle size for controlled evaporation: The 35 µm powder form facilitates consistent source loading and uniform evaporation behavior in e-beam processes, reducing run-to-run variability.
- Standard purity for reproducible films: The 99.4% purity specification provides a reliable baseline for deposition of gallium nitride thin films, suitable for most research and development applications.
Trade-offs
- E-beam hardware dependency: This material is preferred for e-beam evaporation; thermal evaporation requires separate feasibility inquiry (RFQ), and buyers must ensure compatible e-beam hearth and liner or high-temperature crucible.
- Pre-purchase configuration verification required: Buyers must confirm deposition source geometry, pack size, certificate requirements, and shipment conditions before ordering to avoid operational incompatibility.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).






