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Dual-Zone Sliding PECVD System with 400 °C Preheater
PLASMA-ENHANCED DEPOSITION EQUIPMENT
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LABORATORY PROCUREMENT SUPPORT
For model selection, configuration matching, power supply confirmation or quotation review, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The system operates at temperatures up to 400°C under controlled atmosphere and requires precise gas flow and vacuum management. Exceeding the rated temperature or improper gas handling may cause equipment damage or safety hazards.
- Temperature Limit: The furnace temperature must not exceed 400°C to prevent thermal damage to the heating elements and process tubes.
- Gas Flow Range: The gas flow rate must be set within the range of 100 sccm to 500 sccm as specified in the equipment manual.
- Vacuum Integrity: The vacuum system must be leak-tested before each use to maintain process integrity and prevent contamination.
- RF Power Application: RF power should only be applied after the chamber is evacuated and the gas flow is stable to avoid arcing or plasma instability.
This procedure guides the initial configuration and safe start-up of the PECVD system. Follow these steps to verify all parameters before initiating deposition.
Required Equipment: Gas supply system, Vacuum pump, RF power supply
- Confirm Configuration Parameters
Confirm the tube size, heating-zone layout, and gas-flow range against the intended process requirements. - Verify Vacuum and RF Setup
Verify the vacuum package and RF power supply are correctly configured for the deposition process. - Set Preheater Temperature
Set the preheater temperature to the desired value within the 400°C maximum rating.
What is the maximum gas flow rate supported by the Atomfair Dual-Zone Sliding PECVD System model CV-1200-1N?
The Atomfair CV-1200-1N supports gas flow rates up to 500 sccm, as indicated in the updated standard-equipment manual, with additional options available at 100 sccm and 200 sccm. The exact flow channel configuration should be confirmed with the technical sales team before quotation to ensure compatibility with the intended process gases and deposition rates.
Can the Dual-Zone Sliding PECVD System be integrated with an RF plasma source, and what configuration details need to be verified?
The system supports RF plasma source integration, but the specific RF power supply and matching network requirements must be confirmed during the quotation process. The product specification explicitly states that the RF power supply, tube size, heating-zone arrangement, gas-flow channels, and vacuum pump package are all subject to confirmation, ensuring the deposition system matches the user's thin-film preparation or semiconductor material growth needs.
What are the infrastructure requirements for installing this 400 °C PECVD system in a laboratory setting?
The system requires a controlled-atmosphere configuration with a gas supply, vacuum pump package, and tube furnace that must be fully specified at quotation. The 400 °C preheater and dual-zone sliding design demand adequate exhaust ventilation and electrical power supply for the RF source and furnace zones. Protective packaging is included for delivery, but laboratory utilities such as cooling water and compressed air should be planned based on the final vacuum and gas-flow package configuration.
The Dual-Zone Sliding PECVD System with 400 °C Preheater is a configurable low-temperature CVD platform designed for thin-film deposition and controlled-atmosphere material growth. Its dual-zone sliding configuration and integrated preheater enable temperature profiling and gas preheating, but the system requires custom specification of tube size, heating zones, gas channels, and vacuum package, and its gas flow is limited to discrete MFC options (100, 200, or 500 sccm).
Positive
- Dual-zone sliding for temperature profiling: The dual-zone sliding configuration enables sequential or combined heating profiles, allowing precise control of temperature gradients during CVD thin-film deposition.
- Integrated 400°C preheater for gas uniformity: The 400°C preheater heats process gases before entering the reaction zone, improving gas-phase reaction uniformity and deposition consistency.
Trade-offs
- Custom configuration required per application: Tube size, heating-zone layout, gas-flow channels, vacuum pump package, RF source, and power supply must be confirmed before quotation, indicating a non-standard, application-dependent assembly.
- Discrete gas flow options limit flexibility: Gas flow rates are limited to 100, 200, or 500 sccm fixed options, which may not cover all process requirements for precise flow control or high-flow regimes.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
