β-Silicon Carbide Powder 3C-SiC D50 24.0μm ATOMFAIR®

Price range: $179.00 through $649.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

β-Silicon carbide powder with cubic 3C-SiC phase, D50 24.0±0.2 μm, D10 15.0 μm, D90 35.0 μm, and 1.76 g/cm3 tap density.

SKU: AF-FM-C-SICP-024P-SP00
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Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 24.0 ± 0.2 μm


Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 24.0 ± 0.2 μm

Product Description

Atomfair beta Silicon Carbide Powder (3C-SiC) is supplied with D50 24.0±0.2 μm particle size, a cubic beta-SiC (3C-SiC) crystal structure, and controlled powder consistency. It is intended for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research.

Technical Specifications
Parameter Specification / Available Values
Product Beta Silicon Carbide Powder (3C-SiC)
Material Silicon carbide
Chemical Formula SiC
Crystal Phase / Structure Cubic beta-SiC (3C-SiC)
Particle Morphology Equiaxed crystal grains
D10 15.0±0.2 μm
D50 (Median Particle Size) 24.0±0.2 μm
D90 35.0±0.25 μm
D97 ≤49 μm
Tap Density 1.76 ± 0.05 g/cm³ (tap)

Customization & Ordering

Custom particle-size and purity requirements may be evaluated for selected
grades upon request. Alternative package sizes may also be available.
Minimum order quantities, pricing, and lead times vary by specification and
will be confirmed during technical review and quotation.

Key Features and Advantages

  • Defined D50 24.0±0.2 μm particle-size grade.
  • Cubic beta-SiC (3C-SiC) structure.
  • Good thermal conductivity with low thermal-expansion behavior in the product family.
  • Suitable for advanced ceramics, coatings, composites, and semiconductor-related materials evaluation.

APPLICATION SCOPE: advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research

DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation.

LABORATORY PROCUREMENT SUPPORT

For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.

E-MAIL: inquiry@atomfair.com


How does the tight particle size distribution (D50 24.0±0.2 μm, D90 35.0±0.25 μm) of Atomfair beta SiC powder affect densification during sintering of advanced ceramics?

The narrow particle size distribution, with D50 at 24.0±0.2 μm and D90 at 35.0±0.25 μm, promotes uniform packing and reduces sintering variability. The equiaxed crystal morphology further aids in achieving consistent green density, which is critical for producing dense, defect-free ceramic components.

What makes 3C-SiC (beta) powder preferable over 6H-SiC or 4H-SiC for thermal-spray coatings in semiconductor applications?

Cubic beta-SiC (3C-SiC) exhibits good thermal conductivity combined with low thermal-expansion behavior, which minimizes thermal stress during spray coating and subsequent thermal cycling. This phase is also compatible with semiconductor-related materials research where isotropic thermal properties are desired.

What is the significance of the tap density (1.76 ± 0.05 g/cm³) for processing this beta-SiC powder in composite materials?

The tap density of 1.76 ± 0.05 g/cm³ indicates the powder's packing efficiency under vibration, which is important for achieving consistent filler loading in composite materials. A defined tap density ensures reproducible composite fabrication, especially when the powder is used in resin or metal matrix systems.

This beta silicon carbide powder (3C-SiC) with a tightly controlled D50 of 24.0 ± 0.2 μm and cubic crystal structure is evaluated for use in advanced ceramics, thermal-spray coatings, and semiconductor materials research, where its defined particle size distribution and equiaxed morphology support consistent processing.

Positive

  • Tight particle size distribution: D50 of 24.0 ± 0.2 μm with D10 15.0 ± 0.2 μm and D90 35.0 ± 0.25 μm provides narrow size control, reducing variability in sintering or coating thickness.
  • Cubic beta-SiC crystal structure: The 3C-SiC phase offers good thermal conductivity and low thermal expansion, beneficial for thermal management in composite and semiconductor applications.

Trade-offs

  • Tap density constraint: Tap density of 1.76 ± 0.05 g/cm³ may limit packing efficiency in green-body forming or thermal-spray feed, requiring process optimization for dense final parts.
  • Handling and documentation requirements: Batch-specific COA and SDS must be requested separately, and custom specifications require technical review and lead-time confirmation, adding procurement steps.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Package

500g, 1kg, 5kg

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