β-Silicon Carbide Powder 3C-SiC D50 9.7±0.8μm ATOMFAIR®

Price range: $169.00 through $549.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Cubic β-SiC fine abrasive powder with D50 9.7±0.8 μm, D10 6.6±0.5 μm, D90 15.0±2.0 μm and tap density 1.70±0.05 g/cm3. Order now.

SKU: AF-FM-C-SICW-010W-SP00
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Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC), D50 9.7 ± 0.8 μm


Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC), D50 9.7 ± 0.8 μm

Product Description

Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC) is supplied with a D50 9.7 ± 0.8 μm particle-size specification and high natural bulk density. It is intended for precision grinding, lapping, polishing, and abrasive-processing research.

Technical Specifications
Parameter Specification / Available Values
Product Beta Silicon Carbide Fine Abrasive Powder (3C-SiC)
Material Silicon carbide
Chemical Formula SiC
Crystal Phase / Structure Cubic beta-SiC (3C-SiC)
Basic Grain Content 60%-80%
D10 6.6±0.5 μm
D50 (Median Particle Size) 9.7±0.8 μm
D90 15.0±2.0 μm
D97 ≤18 μm
Tap Density 1.70 ± 0.05 g/cm³ (tap)

Customization & Ordering

Custom particle-size and purity requirements may be evaluated for selected
grades upon request. Alternative package sizes may also be available.
Minimum order quantities, pricing, and lead times vary by specification and
will be confirmed during technical review and quotation.

Key Features and Advantages

  • Defined D50 9.7 ± 0.8 μm particle-size grade.
  • High natural bulk density and efficient abrasive-cutting behavior.
  • Lower processed-surface roughness and improved surface-finish performance.
  • Suitable for controlled grinding, lapping, and polishing evaluation.

APPLICATION SCOPE: precision grinding, lapping, polishing, and abrasive-processing research

DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation.

LABORATORY PROCUREMENT SUPPORT

For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.

E-MAIL: inquiry@atomfair.com


This document defines the technical constraints for handling and processing Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC) with a D50 of 9.7 ± 0.8 μm. It is intended for precision grinding, lapping, polishing, and abrasive-processing research applications.

  • Particle Size Distribution Constraint: The powder is supplied with a specified particle size distribution (D50 9.7 ± 0.8 μm, D90 15.0 ± 2.0 μm, D97 ≤ 18 μm) that must be maintained to ensure consistent abrasive performance.
  • Bulk Density Constraint: The material's high natural bulk density (tap density 1.70 ± 0.05 g/cm³) influences its packing behavior and must be considered when designing slurry or abrasive formulations.
  • Crystal Phase Constraint: The powder is specified as cubic beta-SiC (3C-SiC) with a basic grain content of 60%-80%, which defines its abrasive hardness and fracture characteristics.

This procedure outlines the recommended steps for handling and applying Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC) in precision grinding, lapping, or polishing processes. It covers preparation, slurry mixing, and application to ensure consistent results.

Required Equipment: Precision balance, Mixing container, Stirring rod or mechanical stirrer, Lapping or polishing machine

  1. Verify powder specification
    Verify the powder's particle size distribution (D50 9.7 ± 0.8 μm) and crystal phase (3C-SiC) against the certificate of analysis before use.
  2. Prepare the abrasive slurry
    Prepare the abrasive slurry by dispersing the powder in a suitable carrier fluid at the desired concentration, ensuring thorough mixing to avoid agglomeration.
  3. Apply the slurry to the processing surface
    Apply the prepared slurry evenly to the workpiece or processing pad, maintaining a consistent film thickness for uniform abrasive action.
  4. Set processing parameters
    Set the processing parameters (pressure, speed, and time) on the lapping or polishing machine according to the material and desired surface finish.
  5. Monitor the process
    Monitor the process periodically to ensure consistent material removal and to adjust slurry concentration or processing parameters as needed.
  6. Clean the workpiece and equipment
    Clean the workpiece and equipment thoroughly after processing to remove residual abrasive and prevent cross-contamination.

What is the median particle size (D50) and particle size distribution of this beta-SiC powder, and how does it influence surface finish in lapping applications?

The median particle size D50 is 9.7±0.8 μm, with D10=6.6±0.5 μm and D90=15.0±2.0 μm (D97≤18 μm). This controlled distribution is designed to achieve lower processed-surface roughness, making it suitable for precision grinding, lapping, and polishing.

What crystal phase is this silicon carbide powder, and is it suitable for abrasive processing of semiconductor materials?

This is cubic beta-SiC (3C-SiC) powder. It is intended for precision grinding, lapping, polishing, and abrasive-processing research, including applications on hard materials such as ceramics and semiconductors. The high tap density of 1.70±0.05 g/cm³ contributes to efficient abrasive-cutting behavior.

What documentation is available for this product, and how can I obtain batch-specific safety and quality information?

Certificate of Analysis (COA) and Safety Data Sheet (SDS) can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation. Contact the technical sales team at inquiry@atomfair.com for assistance.

Atomfair Beta Silicon Carbide Fine Abrasive Powder (3C-SiC) with D50 9.7 ± 0.8 μm offers a tightly controlled particle-size distribution and high tap density (1.70 ± 0.05 g/cm³), enabling consistent abrasive-cutting behavior and reduced surface roughness in precision grinding, lapping, and polishing applications.

Positive

  • Defined particle-size grade: D50 9.7 ± 0.8 μm with D10 6.6±0.5 μm and D90 15.0±2.0 μm ensures reproducible abrasive performance for controlled material removal and surface finishing.
  • High natural bulk density: Tap density of 1.70 ± 0.05 g/cm³ supports efficient abrasive-cutting behavior and improved surface-finish outcomes in lapping and polishing processes.

Trade-offs

  • Basic grain content range: Basic grain content of 60%-80% indicates a variable fraction of non-optimal grain shapes, which may affect consistency in high-precision abrasive applications.
  • Customization requires technical review: Custom particle-size or purity grades are subject to evaluation and quotation, introducing lead-time uncertainty for non-standard research requirements.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Package

1kg, 5kg

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