Atomfair®
Atomfair® is a proprietary brand of premium materials, equipment and instrument for science & research across disciplines such as advanced battery research. Our products are manufactured using proprietary in-house processes, ensuring high quality, consistency, and cost-effectiveness.
Showing 3793–3808 of 10225 results
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Atomfair 3D Printer Filter Cartridge
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Atomfair 3D Printer Scraper Blade
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Atomfair 3N Grade Nano/Ultrafine/Micron MgO Powder – High Purity Industrial & Ceramic Magnesium Oxide
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Atomfair 4 inch diameter Silicon Carbide (SiC) Substrate
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Atomfair 4-inch GaN Epitaxial Wafer GaN Epitaxial Wafer 4 inch Customized C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
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Atomfair 4-inch GaN Single Crystal Wafer (N-type) GaN-FS 4 inch ≤2cm-2 400±50 μm C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
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Atomfair 4-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 4 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 4-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 4 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 4-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 4 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 4-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 4 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 4-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 4 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 4-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 4 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 4-Inch N-Type Low Resistivity Monocrystalline Silicon Wafer, 500μm Thickness
$69.95 -
Atomfair 4″ N-type As-doped Ge Single Crystal Wafer As N-type 100±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 4″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 100±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 4″ Si/Te-doped GaAs Single Crystal Wafer