Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 70.0 ± 2.5 μm
Product Description
Atomfair beta Silicon Carbide Powder (3C-SiC) is supplied with D50 70.0±2.5 μm particle size, a cubic beta-SiC (3C-SiC) crystal structure, and controlled powder consistency. It is intended for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research.
|
Technical Specifications
|
||||||||||||||||||||||
|
Customization & Ordering
Custom particle-size and purity requirements may be evaluated for selected
grades upon request. Alternative package sizes may also be available.
Minimum order quantities, pricing, and lead times vary by specification and
will be confirmed during technical review and quotation.
Key Features and Advantages
- Defined D50 70.0±2.5 μm particle-size grade.
- Cubic beta-SiC (3C-SiC) structure.
- Good thermal conductivity with low thermal-expansion behavior in the product family.
- Suitable for advanced ceramics, coatings, composites, and semiconductor-related materials evaluation.
APPLICATION SCOPE: advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research
DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation.
LABORATORY PROCUREMENT SUPPORT
For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.
This powder requires controlled atmosphere processing to prevent oxidation at elevated temperatures. Particle size distribution must be verified before use in thermal-spray or sintering applications.
- Oxidation Sensitivity: Beta-SiC powder may oxidize above 800°C in air, necessitating inert or reducing atmosphere for high-temperature processing.
- Particle Size Verification: Confirm D50 70.0 ± 2.5 μm and D90 ≤ 110.0 ± 2.5 μm via laser diffraction before incorporation into ceramic or composite formulations.
- Tap Density Consistency: Tap density of 1.92 ± 0.05 g/cm³ must be maintained to ensure uniform packing in green-body forming processes.
This procedure outlines the preparation and sintering of beta-SiC powder into dense ceramic bodies. All steps assume use of a controlled-atmosphere furnace and standard powder-processing equipment.
Required Equipment: Ball mill with silicon carbide milling media, Controlled-atmosphere tube furnace, Hydraulic press with die set
- Weigh and mill powder
Weigh the required amount of beta-SiC powder and ball-mill for 2 hours with isopropanol to break agglomerates. - Dry and sieve powder
Dry the slurry at 80°C for 12 hours, then sieve through a 100-mesh screen to obtain free-flowing granules. - Press green body
Uniaxially press the powder at 50 MPa in a steel die to form a cylindrical green compact. - Sinter under argon
Place the green body in a graphite crucible and sinter at 1950°C for 1 hour under flowing argon atmosphere. - Cool and inspect
Cool the furnace to room temperature at 5°C/min and inspect the sintered part for cracks or density gradients.
What particle-size distribution is specified for Atomfair beta silicon carbide powder (3C-SiC) at D50 70.0 µm?
Atomfair specifies D50 70.0 ± 2.5 µm, D10 45.0 ± 2.5 µm, D90 110.0 ± 2.5 µm, and D97 ≤ 130 µm. This defined distribution is supplied for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research.
What crystal phase and morphology does the 3C-SiC powder have?
The product is specified as cubic beta-SiC (3C-SiC) with equiaxed crystal grains. The material is supplied as beta Silicon Carbide Powder with D50 70.0 ± 2.5 µm and tap density of 1.92 ± 0.05 g/cm³.
Can custom particle-size or purity requirements be requested for this grade?
Custom particle-size and purity requirements may be evaluated for selected grades upon request, and alternative package sizes may be available. MOQs, pricing, and lead times are confirmed after technical review and quotation.
Atomfair Beta Silicon Carbide Powder (3C-SiC) with D50 70.0±2.5 μm offers a well-defined particle size distribution and cubic crystal structure, providing consistent thermal and mechanical properties for advanced ceramics, coatings, and semiconductor research applications.
Positive
- Tight particle size distribution: D50 70.0±2.5 μm with controlled D10, D90, and D97 ensures reproducible packing and sintering behavior in ceramic and coating processes.
- Cubic beta-SiC structure: The 3C-SiC phase provides good thermal conductivity and low thermal expansion, advantageous for thermal management in composite and semiconductor applications.
Trade-offs
- Moderate tap density: Tap density of 1.92±0.05 g/cm³ may require process optimization for dry pressing or slurry formulation to achieve desired green density.
- Coarse particle fraction: D90 of 110.0±2.5 μm and D97 ≤130 μm may limit direct use in fine-feature or thin-film applications without additional milling or classification.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
