β-Silicon Carbide Powder 3C-SiC D50 3.5μm ATOMFAIR®

Price range: $189.00 through $699.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

β-Silicon carbide powder with cubic 3C-SiC phase, D50 3.5±0.2 μm, D90 5.8±0.5 μm, and 1.45±0.05 g/cm3 tap density. Order now.

SKU: AF-FM-C-SICP-004P-SP00
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Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 3.5 ± 0.2 μm


Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 3.5 ± 0.2 μm

Product Description

Atomfair beta Silicon Carbide Powder (3C-SiC) is supplied with D50 3.5±0.2 μm particle size, a cubic beta-SiC (3C-SiC) crystal structure, and controlled powder consistency. It is intended for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research.

Technical Specifications
Parameter Specification / Available Values
Product Beta Silicon Carbide Powder (3C-SiC)
Material Silicon carbide
Chemical Formula SiC
Crystal Phase / Structure Cubic beta-SiC (3C-SiC)
Particle Morphology Equiaxed crystal grains
D10 1.94±0.3 μm
D50 (Median Particle Size) 3.5±0.2 μm
D90 5.8±0.5 μm
D97 ≤7.0 μm
Tap Density 1.45 ± 0.05 g/cm³ (tap)

Customization & Ordering

Custom particle-size and purity requirements may be evaluated for selected
grades upon request. Alternative package sizes may also be available.
Minimum order quantities, pricing, and lead times vary by specification and
will be confirmed during technical review and quotation.

Key Features and Advantages

  • Defined D50 3.5±0.2 μm particle-size grade.
  • Cubic beta-SiC (3C-SiC) structure.
  • Good thermal conductivity with low thermal-expansion behavior in the product family.
  • Suitable for advanced ceramics, coatings, composites, and semiconductor-related materials evaluation.

APPLICATION SCOPE: advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research

DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation.

LABORATORY PROCUREMENT SUPPORT

For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.

E-MAIL: inquiry@atomfair.com


This powder requires controlled atmosphere storage to prevent moisture adsorption and oxidation, which can alter particle surface chemistry and sintering behavior. The equiaxed morphology and narrow particle size distribution demand careful dispersion protocols to avoid agglomeration during processing.

  • Moisture Sensitivity: Store in sealed containers under dry inert gas to minimize moisture uptake that can degrade powder flow and sintering performance.
  • Agglomeration Risk: The sub-10 μm particle fraction requires mechanical deagglomeration or ultrasonic dispersion before use in slurry or suspension applications.
  • Thermal Processing Constraint: Sintering or thermal spray processing must account for the cubic-to-hexagonal phase transformation above 2000°C, which can alter final material properties.

This procedure outlines safe handling and dispersion steps for beta-SiC powder with D50 3.5 μm. Proper technique minimizes airborne dust exposure and ensures uniform particle distribution in downstream applications.

Required Equipment: Inert-gas glovebox or fume hood, Ultrasonic bath or probe sonicator, Analytical balance with 0.01 g resolution

  1. Weigh powder under inert atmosphere
    Transfer the required mass of beta-SiC powder into a clean container inside an inert-gas glovebox or fume hood to prevent moisture adsorption.
  2. Prepare dispersion medium
    Add the powder to a pre-measured volume of deionized water or compatible organic solvent at a solids loading appropriate for your application.
  3. Disperse agglomerates ultrasonically
    Apply ultrasonic energy for 5–10 minutes at 20–40 kHz to break up soft agglomerates and achieve a stable suspension.
  4. Verify particle distribution
    Measure the particle size distribution of the suspension using laser diffraction to confirm D50 remains within 3.5 ± 0.2 μm before further processing.

How is the particle-size distribution of Atomfair beta-SiC powder controlled beyond the D50 value?

The grade is specified with a D50 median particle size of 3.5±0.2 μm, with D10 of 1.94±0.3 μm, D90 of 5.8±0.5 μm, D97 ≤7.0 μm, and tap density of 1.45±0.05 g/cm³. These parameters define both the fine and coarse portions of the distribution, supporting lot-to-lot consistency for downstream processing.

For which application areas is this 3C-SiC powder intended?

This powder is intended for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research. It is supplied as cubic beta-SiC (3C-SiC) with equiaxed crystal grains, and the product family is described as having good thermal conductivity with low thermal-expansion behavior. Custom particle-size and purity requirements can be evaluated for selected grades upon request.

What batch-specific documentation should be requested before handling this silicon carbide powder?

A certificate of analysis (COA) and safety data sheet (SDS) can be provided upon request for batch-specific confirmation. Additional documentation requirements should be discussed before order confirmation, and technical sales can be contacted for grade selection, particle-size confirmation, or custom specification review.

This beta silicon carbide powder (3C-SiC) with D50 3.5±0.2 μm provides a well-defined particle size distribution and cubic crystal structure, making it suitable for advanced ceramics, composites, thermal-spray coatings, and semiconductor research. Its good thermal conductivity and low thermal expansion are advantageous for thermal management, but the low tap density may require optimization in green body processing.

Positive

  • Tight particle size distribution: The D50 is controlled to 3.5±0.2 μm with D97 ≤7.0 μm, ensuring consistent flow, packing, and sintering behavior across advanced ceramic and coating applications.
  • Cubic beta-SiC with thermal advantages: The 3C-SiC crystal structure offers good thermal conductivity and low thermal expansion, beneficial for thermal management in semiconductor and composite materials research.

Trade-offs

  • Low tap density limits packing density: Tap density is only 1.45±0.05 g/cm³, which may reduce green body density and require higher compaction pressures or binders in ceramic forming processes.
  • Custom specifications require lead time: Custom particle sizes or purity grades are not stock items; they must be evaluated upon request, adding lead time and minimum order quantity constraints.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Package

500g, 1kg, 5kg

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