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Atomfair 3″ Sn-doped InAs Single Crystal Wafer Sn-doped InAs 76.2mm±0.25mm N-type (5-20)10 cm-37000-20000 cm2/V-s<5x104cm-2(100) 600±25μm SSP/DSP

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

We offer 2”, 3”, 4” Indium Arsenide (InAs) single-crystal wafers—gray cubic crystalline semiconductors composed of indium and arsenic, with a melting point of 942℃. As a direct bandgap material (similar to GaAs), InAs features high electron mobility and a narrow bandgap. It’s ideal for 1-3.12μm infrared detectors (e.g., photovoltaic photodiodes, usable at room temperature for high-power apps or cooled for low noise), diode lasers, and terahertz radiation sources (as a strong photo-Amber emitter). It also works with InP or alloys with GaAs to form InGaAs.

SKU: AFMSFSNV967
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Description

Property Value
Material Sn-doped InAs
Diameter 76.2mm±0.25mm
Type N-type
Carrier Concentration (5-20)×1017 cm-3
Mobility 7000-20000 cm2/V·s
Dislocation Density <5×104 cm-2
Orientation (100)
Thickness 600±25μm
Surface Single/Double side polished

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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