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Molybdenum-Lanthanum Alloy Sputtering Target (MoLa)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum-based deposition in a magnetron sputtering system with controlled Ar atmosphere at 0.5-2.0 Pa. Power density must not exceed 15 W/cm² (DC) or 5 W/cm² (RF) to prevent thermal damage or compositional deviation.
- Power Density Limit: Operating above the maximum power density risks target cracking, delamination from the backing plate, and loss of stoichiometric control in deposited films.
- Bonding Integrity: Indium or elastomer bonding must be selected based on substrate temperature during sputtering to avoid bond failure at elevated thermal loads.
- Surface Contamination Risk: The machined surface finish (Ra ≤ 0.8 µm) must be protected from oxidation and particulate contamination prior to installation in the sputtering chamber.
This procedure covers mounting the target onto a compatible backing plate and performing a pre-sputter conditioning run. Proper installation ensures uniform erosion and prevents arcing during deposition.
Required Equipment: Vacuum sputtering system with DC/RF power supply, Argon gas supply (99.999% purity), Cleanroom-grade gloves and lint-free wipes
- Inspect target surface
Inspect the target surface for scratches, oxidation, or particulate contamination using a cleanroom-grade wipe and isopropanol if needed. - Mount target onto backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the selected indium or elastomer bonding method, ensuring full thermal contact. - Install assembly in sputtering chamber
Install the bonded target assembly into the sputtering cathode, torque fasteners to manufacturer specifications, and close the chamber. - Evacuate chamber and introduce argon
Evacuate the chamber to base pressure below 1×10⁻⁴ Pa, then backfill with argon to a working pressure of 0.5-2.0 Pa. - Pre-sputter condition the target
Pre-sputter the target at 50% of maximum rated power for 10-15 minutes with shutter closed to remove surface oxides and stabilize the plasma. - Verify deposition rate and uniformity
Verify deposition rate and thickness uniformity using a quartz crystal monitor and test substrate before commencing production runs.
How does the 99.9% purity and impurity specification of the MoLa sputtering target affect deposited film quality?
The 99.9% (3N) purity with total metallic impurities below 1000 ppm and oxygen plus nitrogen below 200 ppm minimizes contamination during sputtering, which directly improves deposited film resistivity and adhesion. This low impurity level is critical for applications such as diffusion barriers and gate electrodes where film purity determines electrical performance.
What are the optimal sputtering conditions for the MoLa target to achieve uniform deposition across a 100 mm substrate?
The target is optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa argon atmosphere. Under these conditions, deposition rates of 10-80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate, provided the composition and dimensions are confirmed for the intended process.
What bonding and backing plate options are available for the MoLa sputtering target, and why are they important for thermal management?
The target offers optional indium bonding or elastomer bonding, and the backing plate can be oxygen-free copper or CuCrZr alloy. Proper bonding and backing plate selection ensure efficient heat dissipation during high-power sputtering, preventing target cracking and maintaining stable deposition rates. The choice depends on the specific deposition system's thermal load and vacuum compatibility.
The MoLa sputtering target (99.9% purity, 2 in x 0.125 in) offers fine-grained structure and optimized sputtering parameters for DC/RF magnetron deposition, achieving uniform films with controlled stoichiometry, but requires careful selection of bonding and backing plate options and process optimization.
Positive
- High purity and fine grain structure: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, combined with ≤50 µm grain size, minimizes contamination and improves deposited film resistivity and adhesion.
- Optimized sputtering parameters for uniformity: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
Trade-offs
- Bonding and backing plate options require specification: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional and must be selected and confirmed against the deposition system before ordering, adding a procurement constraint.
- Performance depends on optimized sputtering conditions: Stated deposition rates (10-80 nm/min) and stoichiometric transfer (±2 at%) are achieved under optimized sputtering conditions, requiring user to tune process parameters for their specific system.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
