Beta Silicon Carbide Powder 3C-SiC D50 4.5μm ATOMFAIR®

Price range: $189.00 through $699.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

3C-SiC beta silicon carbide powder with D50 4.5±0.5 μm, D10 2.8±0.4 μm, D90 7.15±0.45 μm and 1.63±0.05 g/cm3 tap density. Order now.

SKU: AF-FM-C-SICP-0041-SP00
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Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 4.5 ± 0.5 μm


Atomfair Beta Silicon Carbide Powder (3C-SiC), D50 4.5 ± 0.5 μm

Product Description

Atomfair beta Silicon Carbide Powder (3C-SiC) is supplied with D50 4.5±0.5 μm particle size, a cubic beta-SiC (3C-SiC) crystal structure, and controlled powder consistency. It is intended for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research.

Technical Specifications
Parameter Specification / Available Values
Product Beta Silicon Carbide Powder (3C-SiC)
Material Silicon carbide
Chemical Formula SiC
Crystal Phase / Structure Cubic beta-SiC (3C-SiC)
Particle Morphology Equiaxed crystal grains
D10 2.8±0.4 μm
D50 (Median Particle Size) 4.5±0.5 μm
D90 7.15±0.45 μm
D97 ≤8.5 μm
Tap Density 1.63 ± 0.05 g/cm³ (tap)

Customization & Ordering

Custom particle-size and purity requirements may be evaluated for selected
grades upon request. Alternative package sizes may also be available.
Minimum order quantities, pricing, and lead times vary by specification and
will be confirmed during technical review and quotation.

Key Features and Advantages

  • Defined D50 4.5±0.5 μm particle-size grade.
  • Cubic beta-SiC (3C-SiC) structure.
  • Good thermal conductivity with low thermal-expansion behavior in the product family.
  • Suitable for advanced ceramics, coatings, composites, and semiconductor-related materials evaluation.

APPLICATION SCOPE: advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research

DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation. Additional documentation requirements may be discussed before order confirmation.

LABORATORY PROCUREMENT SUPPORT

For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.

E-MAIL: inquiry@atomfair.com


What particle-size distribution and tap density should be expected for Atomfair beta SiC powder with D50 4.5 μm?

The supplied grade is specified as D10 2.8±0.4 μm, D50 4.5±0.5 μm, D90 7.15±0.45 μm, and D97 ≤8.5 μm, with a tap density of 1.63±0.05 g/cm³. Atomfair describes the powder as having equiaxed crystal grains and a cubic beta-SiC (3C-SiC) structure. These particle-size parameters define the grade for advanced ceramics, coatings, composites, and semiconductor-related materials evaluation.

Which application areas is this beta-SiC (3C-SiC) powder intended for?

Atomfair specifies this 3C-SiC powder for advanced ceramics, composite materials, thermal-spray coatings, and semiconductor-related materials research. It is supplied with a cubic beta-SiC (3C-SiC) crystal phase and a controlled D50 4.5±0.5 μm particle-size grade. The stated application scope is limited to these research and materials-evaluation areas.

Can custom particle size, purity, or package size be requested for this SiC powder?

Custom particle-size and purity requirements may be evaluated for selected grades upon request, and alternative package sizes may also be available. Minimum order quantities, pricing, and lead times vary by specification and are confirmed during technical review and quotation. Standard package options for this listing are 500g, 1kg, and 5kg.

Atomfair Beta Silicon Carbide Powder (3C-SiC) with D50 4.5 ± 0.5 μm provides a controlled cubic beta-SiC particle size distribution suitable for advanced ceramics, thermal-spray coatings, and semiconductor materials research, though its tap density and fine particle handling require careful processing infrastructure.

Positive

  • Controlled particle size distribution: D50 4.5 ± 0.5 μm with D10 2.8±0.4 μm, D90 7.15±0.45 μm, and D97 ≤8.5 μm ensures consistent powder behavior for sintering, coating, and composite formulation.
  • Cubic beta-SiC crystal structure: The 3C-SiC phase provides good thermal conductivity and low thermal expansion, advantageous for thermal management in advanced ceramics and semiconductor-related applications.

Trade-offs

  • Moderate tap density: Tap density of 1.63 ± 0.05 g/cm³ may require compaction optimization or binder systems for dense green-body formation in ceramic processing.
  • Fine particle handling requirements: Sub-10 μm particle size (D97 ≤8.5 μm) necessitates dust control measures and proper ventilation during handling to avoid inhalation exposure and cross-contamination.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Package

500g, 1kg, 5kg