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Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

As a third-generation semiconductor material, gallium nitride (GaN) features superior bandgap (far higher than silicon and silicon carbide), thermal conductivity, electron mobility, and on-resistance. Due to high N dissociation pressure during GaN growth at high temperatures, large-sized GaN single crystals are hard to obtain-thus, preparing epitaxial GaN films on heterogeneous substrates becomes the main method for GaN material and device research. Common growth methods include HVPE, MBE, and MOCVD. Most commercial devices are based on GaN heteroepitaxy, with SiC, Si, and Sapphire as primary substrates.

SKU: AFMSIGQK086
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Description

Characteristics
Substrate Material Sapphire
Diameter 2 inch
Uniformity Excellent
Breakdown Voltage High
Buffer Leakage Very Low
Electron Concentration High
Electron Mobility High
Sheet Resistance Low

Thermal management achieved through flip-chip bonding to thermally conductive substrates like AlN ceramics.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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