Description
High-Quality InP Substrates
High-quality InP substrates with various doping options (none, Sn, S, Fe, Zn). Ideal for high-speed electronics and photonic applications. Features low dislocation density and excellent electrical properties.
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Property
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Value
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Doping
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none, Sn, S, Fe, Zn
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Conduction Types
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N, N, N, SI, P
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Carrier Concentration
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1-2×10¹⁸ cm⁻³, 1-3×10¹⁸ cm⁻³, 1-4×10¹⁸ cm⁻³, 6-4×10¹⁵ cm⁻³
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Dislocation Density
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<5×10³ cm⁻²
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Growth Method
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LEC
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Standard Substrate Size
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φ2″×0.35mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
