A silicon dioxide layer forms on the surface of a thermal oxide. This process, conducted at an elevated temperature in the presence of an oxidizing agent, is known as thermal oxidation. Thermal oxide layers are typically grown in a horizontal tube furnace, with the temperature controlled within the range of 900 to 1200 degrees Celsius, using either wet or dry growth methods.

Thermal oxide is a grown oxide layer. Compared to oxide layers deposited by CVD (Chemical Vapor Deposition), it serves as a superior dielectric layer for insulation purposes. In most silicon-based devices, the thermal oxide layer plays a crucial role in passivating the silicon wafer surface, acting as a dopant barrier and a surface dielectric.

Parameter Category	Specifications
Growth Method	Czochralski Method (CZ)
Diameter and Tolerance (mm)	1 inch: 25.4±0.3 2 inches: 50.8±0.3 3 inches: 76.2±0.3 4 inches: 100±0.4 5 inches: 125±0.4 6 inches: 150±0.4 8 inches: 200±0.4 12 inches: 300±0.4
Type/Dopant	N-type (doped with Phosphorus, Arsenic, Antimony); P-type (doped with Boron)
Crystal Orientation	Standard: <100> Optional: <110><111>
Resistivity (Ω·cm)	0.001–0.005, 1–10, >5000
Thickness (μm)	500–725 μm
Oxide Layer Thickness (nm)	20, 50, 90, 100, 200, 285, 300, 500, 800, 1000, 1500, 2000, 3000 nm
Flatness (TIR)	<3μm
Surface Roughness (Ra)	<0.5 μm
Bow	<20 μm
Total Thickness Variation (TTV)	<20 μm
Particle Count (per Wafer)	0.3<30 μm
Oxidation & Polishing Type	①Single-side Polishing + Double-side Oxidation; ②Single-side Polishing + Single-side Oxidation; ③Double-side Polishing + Double-side Oxidation; ④Double-side Polishing + Single-side Oxidation

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Silicon Wafers & Substrates