Aligned arrays of multiwalled carbon nanotube silicon oxide substrate, conductivity 10^3 S/m, diameter 3-10 nm

$506.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Aligned arrays of multiwalled carbon nanotube silicon oxide substrate, conductivity 10^3 S/m, diameter 3-10 nm is a carbon nanotube array material supplied with conductivity 10^3 S/m, diameter 3-10 nm. It is prepared for buyer comparison by model, material form, concentration or dimensional specification before quotation.

SKU: AF-NM-C-MWCN-Z076-R05K
Category:
Tags: , ,
Brands:

Aligned arrays of multiwalled carbon nanotube silicon oxide substrate, conductivity 10^3 S/m, diameter 3-10 nm

Product Type: Carbon nanotube array material
Research-grade laboratory product

Product Overview

Aligned arrays of multiwalled carbon nanotube silicon oxide substrate, conductivity 10^3 S/m, diameter 3-10 nm is a carbon nanotube array material supplied with conductivity 10^3 S/m, diameter 3-10 nm. It is prepared for buyer comparison by model, material form, concentration or dimensional specification before quotation.

The specification table gives the measurable selection details available for this item, including material form, dimensional range, purity, content, conductivity, solvent or composition when supplied for the selected model.

Use this page to compare nanocarbon specifications before requesting a quotation, especially where functional group, concentration, geometry, package form or availability affects laboratory procurement.

Performance Features

  • Material form: Aligned arrays of multiwalled carbon nanotube silicon oxide substrate identifies the carbon nanotube array material for procurement comparison.
  • Diameter: 3-10 nm supports model matching against the required experiment or formulation workflow.
  • Purity: 98% supports model matching against the required experiment or formulation workflow.
  • Height: 100-1000um; Density<=0.3 g/cm3 supports model matching against the required experiment or formulation workflow.
  • Specific surface area: ~20 m2/g supports model matching against the required experiment or formulation workflow.
  • Electrical conductivity: 10^3 S/m supports model matching against the required experiment or formulation workflow.

Technical Specifications

Parameter Specification / Available Values
Atomfair Model AF-CNTM-Z076
Diameter 3-10 nm
Purity 98%
Height 100-1000um; Density<=0.3 g/cm3
Specific surface area ~20 m2/g
Electrical conductivity 10^3 S/m

Selection and Use Notes

  • Match the material form and dimensional or concentration specification to the intended dispersion, composite, film, electrode, conductivity or nanocarbon research workflow.
  • Confirm the selected model, quantity, package size and application requirements before quotation.
QUOTATION DETAILS: Confirm substrate, nanotube diameter, array height, density and quantity before quotation.
SPECIFICATION CONFIRMATION: Array height, substrate type, density, surface area and conductivity are reviewed for the selected aligned CNT material.
MATERIAL SELECTION: Aligned array geometry can be matched to electrode, interface, field-emission or structured nanomaterial workflows.
QUOTATION REQUEST: Include substrate, array height range, piece quantity and target geometry when requesting quotation support.
LABORATORY PROCUREMENT SUPPORT
For model selection, material specification matching, application fit or quotation confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Supplier: Atomfair
Brand: ATOMFAIR®

Manufacturer: Atomfair LLC

Brand: ATOMFAIR®

This material consists of vertically aligned multiwalled carbon nanotubes grown on a silicon oxide substrate. The array height and density must be matched to the target application to ensure consistent electrical and structural performance.

  • Substrate and Alignment Integrity: The silicon oxide substrate provides mechanical support and the nanotube alignment must be preserved during handling to avoid degradation of field-emission or electrode properties.

How does the diameter range of 3–10 nm and specific surface area of ~20 m²/g affect the suitability of aligned MWCNT arrays for field-emission applications?

The 3–10 nm diameter provides a high aspect ratio suited for field-emission enhancement, while the ~20 m²/g specific surface area indicates a relatively low porosity consistent with aligned arrays. The product description explicitly states these specs and notes that the aligned array geometry can be matched to field-emission workflows.

What compatibility constraints must be considered when integrating aligned MWCNT arrays on silicon oxide substrates with standard semiconductor fabrication processes?

The silicon oxide substrate is dielectric and the array height range of 100–1000 µm may require process adjustments such as modified lithography or etching steps. The product description confirms that substrate, array height, density, and conductivity must be reviewed and matched to the target workflow before quotation.

What handling and workflow requirements are needed to properly use aligned MWCNT arrays on silicon oxide substrates in electrode fabrication?

The material form, dimensional specifications (height 100–1000 µm, density ≤0.3 g/cm³), and conductivity 10³ S/m must be matched to the intended electrode fabrication workflow. The product description emphasizes that substrate, array height, density, and quantity should be confirmed before quotation, implying that careful selection is required for successful integration.

This aligned multiwalled carbon nanotube array on silicon oxide substrate offers a conductivity of 10^3 S/m and a diameter range of 3-10 nm, making it suitable for structured nanomaterial applications such as electrodes or field-emission devices. The low density (≤0.3 g/cm³) and moderate specific surface area (~20 m²/g) define its operational trade-offs for composite or interface integration.

Positive

  • High electrical conductivity: With a conductivity of 10^3 S/m, this aligned CNT array provides reliable electrical performance for electrode, interface, or field-emission research workflows.
  • Controlled array geometry: The aligned array structure with height 100-1000 µm and low density ≤0.3 g/cm³ enables reproducible integration into structured nanomaterial devices.

Trade-offs

  • Moderate specific surface area: A specific surface area of ~20 m²/g limits the material's effectiveness in applications requiring high surface interaction, such as catalysis or adsorption.
  • Substrate-dependent handling: The silicon oxide substrate imposes constraints on mechanical flexibility and thermal processing, requiring careful handling to avoid substrate damage during integration.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).