Description
High-Quality Silicon Carbide Substrates for GaN Epitaxial Growth
High-quality silicon carbide substrates for GaN epitaxial growth with 3.5% lattice mismatch at <0001> orientation. Available in standard size of 4″×0.5mm with hexagonal crystal structure.
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Property
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Value
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Structure
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Hexahedron a=3.080Å c=15.12Å
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Density
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3.217
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Thermal expansivity
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10.3
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Lattice mismatch rate with GaN
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3.5% at <0001> orientation
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Standard size
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4″×0.5mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
