Description
SiC epitaxial wafers use SiC single crystal wafers as substrates. A single crystal layer is typically deposited on the wafer via the Chemical Vapor Deposition (CVD) method to form the epitaxial wafer-specifically, SiC epitaxy is prepared by growing a SiC epitaxial layer on a conductive SiC substrate, which further enables the manufacturing of power devices.
Our company offers 4-inch and 6-inch N-type 4H-SiC epitaxial wafers. These wafers feature large bandgap, high saturated electron drift velocity, high-speed two-dimensional electron gas, and high breakdown field strength. Such properties allow devices to achieve high-temperature resistance, high-voltage resistance, fast switching speed, low on-resistance, small size, and light weight.
SiC epitaxial wafers are mainly used for Schottky Barrier Diodes (SBD), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET), Junction Field-Effect Transistors (JFET), Bipolar Junction Transistors (BJT), Silicon Controlled Rectifiers (SCR), and Insulated Gate Bipolar Transistors (IGBT), covering low-voltage, medium-voltage, and high-voltage fields. Currently, SiC epitaxial wafers for high-voltage applications are in the R&D stage worldwide.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
