Description
This high-purity Titanium Silicon (TiSi) alloy sputtering target is manufactured via powder metallurgy, ensuring excellent conductivity and uniformity. Ideal for thin film deposition in semiconductor and optical applications, it comes bonded to a copper backing plate for enhanced thermal management.
| Property | Specification |
|---|---|
| Material | Titanium Silicon Alloy (Ti/Si = 75/25 at%) |
| Purity | 99.5% |
| Dimensions | φ74 mm × 4 mm (target) bonded to φ80 mm × 3 mm copper backing plate |
| Manufacturing Process | Powder Metallurgy |
| Conductivity | Conductive |
| Packaging | 1 piece per unit (packed individually) |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
