Atomfair Germanium (Ge) Semiconductor Substrate

High-quality germanium semiconductor substrate with intrinsic, N-type, and P-type doping options. Ideal for infrared optics and high-speed electronic devices. Available in standard wafer sizes with precise thickness control.

Description

High-Quality Germanium Semiconductor Substrate
High-quality germanium semiconductor substrate with intrinsic, N-type, and P-type doping options. Ideal for infrared optics and high-speed electronic devices. Available in standard wafer sizes with precise thickness control.
Property
Value
Structure
Cube a=5.6575
Conduction Types
Intrinsic/N/P
Doping
Non (Intrinsic), Sb (N-type), Ga (P-type)
Resistivity
>35 Ω·cm (Intrinsic), 0.05~35 Ω·cm (Doped)
Growth Method
CZ
Standard Substrate Sizes
φ2″×0.5mm, φ3″×0.5mm, 4″×0.5mm
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.