Description
High-Quality GaAs Substrates
Versatile GaAs substrates with various doping options (None, Si, Cr, Te, Zn). Suitable for high-frequency and optoelectronic applications. Offered in multiple sizes with excellent crystal quality and low dislocation density.
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Property
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Value
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Doping
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None, Si, Cr, Te, Zn
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Conduction Types
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SI, N, N, P
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Carrier Concentration
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>5×10¹⁷ cm⁻³, ~2×10¹⁸ cm⁻³, >5×10¹⁷ cm⁻³
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Dislocation Density
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<5×10³ cm⁻²
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Growth Method
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LEC & HB
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Standard Substrate Sizes
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φ3″×0.5mm, φ2″×0.35mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
