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Atomfair Silicon/Silicon Dioxide (Si/SiO2) Oxide Silicon Wafer and Substrates Prime Grade

Atomfair Silicon/Silicon Dioxide (Si/SiO2) Oxide Silicon Wafer and Substrates Prime Grade

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Thermal oxide (silicon dioxide, SiO2) layer is formed on silicon wafer surface at an  elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO2  thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.

SKU: AFMSEEXK342
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Description

A silicon dioxide layer forms on the surface of a thermal oxide. This process, conducted at an elevated temperature in the presence of an oxidizing agent, is known as thermal oxidation. Thermal oxide layers are typically grown in a horizontal tube furnace, with the temperature controlled within the range of 900 to 1200 degrees Celsius, using either wet or dry growth methods.
Thermal oxide is a grown oxide layer. Compared to oxide layers deposited by CVD (Chemical Vapor Deposition), it serves as a superior dielectric layer for insulation purposes. In most silicon-based devices, the thermal oxide layer plays a crucial role in passivating the silicon wafer surface, acting as a dopant barrier and a surface dielectric.
Parameter Category
Specifications
Growth Method
Czochralski Method (CZ)
Diameter and Tolerance (mm)
1 inch: 25.4±0.3
2 inches: 50.8±0.3
3 inches: 76.2±0.3
4 inches: 100±0.4
5 inches: 125±0.4
6 inches: 150±0.4
8 inches: 200±0.4
12 inches: 300±0.4
Type/Dopant
N-type (doped with Phosphorus, Arsenic, Antimony);
P-type (doped with Boron)
Crystal Orientation
Standard: <100>
Optional: <110><111>
Resistivity (Ω·cm)
0.001–0.005, 1–10, >5000
Thickness (μm)
500–725 μm
Oxide Layer Thickness (nm)
20, 50, 90, 100, 200, 285, 300, 500, 800, 1000, 1500, 2000, 3000 nm
Flatness (TIR)
<3μm
Surface Roughness (Ra)
<0.5 μm
Bow
<20 μm
Total Thickness Variation (TTV)
<20 μm
Particle Count (per Wafer)
0.3<30 μm
Oxidation & Polishing Type
①Single-side Polishing + Double-side Oxidation;
②Single-side Polishing + Single-side Oxidation;
③Double-side Polishing + Double-side Oxidation; ④Double-side Polishing + Single-side Oxidation

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