Description
Versatile GaAs substrates with various doping options (None, Si, Cr, Te, Zn). Suitable for high-frequency and optoelectronic applications. Offered in multiple sizes with excellent crystal quality and low dislocation density.
| Property | Value |
|---|---|
| Doping | None, Si, Cr, Te, Zn |
| Conduction Types | SI, N, N, P |
| Carrier Concentration | >5??10?? cm??, ~2??10?? cm??, >5??10?? cm?? |
| Dislocation Density | <5??10? cm?? |
| Growth Method | LEC & HB |
| Standard Substrate Sizes | fai3″??0.5mm, fai2″??0.35mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
