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Atomfair Gallium Arsenide (GaAs) Semiconductor Substrate
Versatile GaAs substrates with various doping options (None, Si, Cr, Te, Zn). Suitable for high-frequency and optoelectronic applications. Offered in multiple sizes with excellent crystal quality and low dislocation density.
Description
Versatile GaAs substrates with various doping options (None, Si, Cr, Te, Zn). Suitable for high-frequency and optoelectronic applications. Offered in multiple sizes with excellent crystal quality and low dislocation density.
| Property | Value |
|---|---|
| Doping | None, Si, Cr, Te, Zn |
| Conduction Types | SI, N, N, P |
| Carrier Concentration | >5??10?? cm??, ~2??10?? cm??, >5??10?? cm?? |
| Dislocation Density | <5??10? cm?? |
| Growth Method | LEC & HB |
| Standard Substrate Sizes | fai3″??0.5mm, fai2″??0.35mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
