Description
High-Quality GaP Substrates
Undoped and doped GaP substrates for optoelectronic applications. Features excellent thermal and electrical properties for LED and photonic devices. Available in standard wafer sizes with low dislocation density.
|
Property
|
Value
|
|
Doping
|
Undoped, S, N
|
|
Conduction Types
|
N, NN
|
|
Carrier Concentration
|
2-8×10¹⁷ cm⁻³, 2-6×10¹⁸ cm⁻³
|
|
Dislocation Density
|
<10³ cm⁻²
|
|
Growth Method
|
LEC
|
|
Standard Substrate Size
|
φ2″×0.25mm
|
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
