Description
High-Purity Silicon Semiconductor Substrate
High-purity silicon semiconductor substrate available in intrinsic, N-type, and P-type doping. Suitable for various electronic applications due to its excellent semiconductor properties. Offered in multiple diameters and thicknesses for flexibility in device fabrication.
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Property
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Value
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Structure
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Cube a=5.0430
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Conduction Types
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Intrinsic/N/P
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Doping
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Non (Intrinsic), P (N-type), B (P-type)
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Resistivity
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102~104 Ω·cm (Intrinsic), 0.001~40 Ω·cm (Doped)
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Growth Method
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CZ
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Standard Substrate Sizes
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φ2″×0.5mm, φ3″×0.5mm, 4″×0.5mm, φ6″×0.5mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
