Description
This high-purity Gallium Arsenide (GaAs) sputtering target offers 99.9% (3N) purity, ideal for thin film deposition applications. The target comes bonded to a copper backing plate for enhanced thermal conductivity and durability during sputtering processes.
| Material | Purity | Dimensions | Backing Plate | Packaging | Pack Size |
|---|---|---|---|---|---|
| Gallium Arsenide (GaAs) | 99.9% (3N) | φ48×3mm | Bonded to φ50.8×1mm copper plate | Per piece | 1 |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
