Description
This high-purity Gallium Arsenide (GaAs) sputtering target offers 99.9% (3N) purity, ideal for thin film deposition applications. The target comes bonded to a copper backing plate for enhanced thermal conductivity and durability during sputtering processes.
| Material | Purity | Dimensions | Backing Plate | Packaging | Pack Size |
|---|---|---|---|---|---|
| Gallium Arsenide (GaAs) | 99.9% (3N) | φ48×3mm | Bonded to φ50.8×1mm copper plate | Per piece | 1 |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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